A high-performance 0.25- mu m CMOS technology. II. Technology
10.1109/16.127490
Crossref journal-article
Institute of Electrical and Electronics Engineers (IEEE)
IEEE Transactions on Electron Devices (263)
Bibliography

Davari, B., Chang, W. H., Petrillo, K. E., Wong, C. Y., Moy, D., Taur, Y., Wordeman, M. R., Sun, J. Y.-C., Hsu, C. C.-H., & Polcari, M. R. (1992). A high-performance 0.25- mu m CMOS technology. II. Technology. IEEE Transactions on Electron Devices, 39(4), 967–975.

Authors 10
  1. B. Davari (first)
  2. W.H. Chang (additional)
  3. K.E. Petrillo (additional)
  4. C.Y. Wong (additional)
  5. D. Moy (additional)
  6. Y. Taur (additional)
  7. M.R. Wordeman (additional)
  8. J.Y.-C. Sun (additional)
  9. C.C.-H. Hsu (additional)
  10. M.R. Polcari (additional)
References 24 Referenced 97
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  2. 10.1109/T-ED.1977.18712
  3. {'key': 'ref12', 'first-page': '238', 'article-title': 'Doping of n<superscript>+</superscript> and p<superscript>+</superscript> polysilicon in a dual-gate CMOS process', 'author': 'wong', 'year': '1988', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / Doping of n<superscript>+</superscript> and p<superscript>+</superscript> polysilicon in a dual-gate CMOS process by wong (1988)
  4. {'key': 'ref13', 'first-page': '52', 'article-title': '0.5 micron CMOS for high performance at 3.3 V', 'author': 'r', 'year': '1988', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / 0.5 micron CMOS for high performance at 3.3 V by r (1988)
  5. 10.1109/IEDM.1989.74231
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  7. 10.1109/IEDM.1986.191162 / 1986 International Electron Devices Meeting / a symmetric submicron cmos technology by hillenius (1986)
  8. {'key': 'ref17', 'first-page': '368', 'article-title': 'Very shallow junctions for submicron CMOS technology using implanted Ti for salicidation', 'author': 'davari', 'year': '1987', 'journal-title': 'VLSI Sci Tech Dig'} / VLSI Sci Tech Dig / Very shallow junctions for submicron CMOS technology using implanted Ti for salicidation by davari (1987)
  9. 10.1109/T-ED.1987.22965 / IEEE Transactions on Electron Devices / source&#8212;drain contact resistance in cmos with self-aligned tisi<inf>2</inf> by taur (1987)
  10. {'key': 'ref19', 'first-page': '254', 'article-title': 'The use of TiSi<subscript>2</subscript> in a selfaligned silicide technology', 'author': 'ting', 'year': '1982', 'journal-title': 'VLSI Sci Tech Dig'} / VLSI Sci Tech Dig / The use of TiSi<subscript>2</subscript> in a selfaligned silicide technology by ting (1982)
  11. {'key': 'ref4', 'year': '0'} (0)
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  13. {'key': 'ref6', 'first-page': '61', 'article-title': 'Submicron tungsten gate MOSFET with 10 nm gate oxide', 'author': 'davari', 'year': '0', 'journal-title': 'Proc 1987 Symp VLSI Technology'} / Proc 1987 Symp VLSI Technology / Submicron tungsten gate MOSFET with 10 nm gate oxide by davari (0)
  14. 10.1109/IEDM.1987.191506 / 1987 International Electron Devices Meeting / design methodology for deep submicron cmos by tanaka (1987)
  15. {'key': 'ref8', 'first-page': '381', 'article-title': 'Use of thin TiSi<subscript>2</subscript> for submicron VLSI CMOS', 'volume': '87 11', 'author': 'moy', 'year': '1987', 'journal-title': 'Proc 2nd Int Symp VLSI Science and Technology'} / Proc 2nd Int Symp VLSI Science and Technology / Use of thin TiSi<subscript>2</subscript> for submicron VLSI CMOS by moy (1987)
  16. 10.1109/T-ED.1987.22956 / IEEE Transactions on Electron Devices / the impact of intrinsic series resistance on mosfet scaling by ng (1987)
  17. 10.1109/16.127490
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  22. {'key': 'ref21', 'article-title': 'Substrate and dopant effects on the formation of TiSi<subscript>2</subscript>', 'author': 'basavaiah', 'year': '1986', 'journal-title': 'Proc Mat Res Soc'} / Proc Mat Res Soc / Substrate and dopant effects on the formation of TiSi<subscript>2</subscript> by basavaiah (1986)
  23. 10.1109/IEDM.1987.191530 / 1987 International Electron Devices Meeting / corner-field induced drain leakage in thin oxide mosfets by chang (1987)
  24. 10.1016/0040-6090(80)90086-3
Dates
Type When
Created 22 years, 11 months ago (Aug. 24, 2002, 4:40 p.m.)
Deposited 3 years, 8 months ago (Nov. 29, 2021, 2:08 p.m.)
Indexed 5 months ago (March 22, 2025, 4:34 a.m.)
Issued 33 years, 4 months ago (April 1, 1992)
Published 33 years, 4 months ago (April 1, 1992)
Published Print 33 years, 4 months ago (April 1, 1992)
Funders 0

None

@article{Davari_1992, title={A high-performance 0.25- mu m CMOS technology. II. Technology}, volume={39}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/16.127490}, DOI={10.1109/16.127490}, number={4}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Davari, B. and Chang, W.H. and Petrillo, K.E. and Wong, C.Y. and Moy, D. and Taur, Y. and Wordeman, M.R. and Sun, J.Y.-C. and Hsu, C.C.-H. and Polcari, M.R.}, year={1992}, month=apr, pages={967–975} }