DOI: 10.1103/physrevlett.96.246401. Theory of Defect Levels and the “Band Gap Problem” in Silicon

Theory of Defect Levels and the “Band Gap Problem” in Silicon

10.1103/physrevlett.96.246401

Crossref journal-article

American Physical Society (APS)

Physical Review Letters (16)

Bibliography

Schultz, P. A. (2006). Theory of Defect Levels and the âBand Gap Problemâ in Silicon. Physical Review Letters, 96(24).

Authors 1

Peter A. Schultz (first)

References 30 Referenced 137

10.1103/PhysRev.136.B864
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10.1116/1.1317812
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10.1103/PhysRevLett.51.1888
10.1103/PhysRevB.32.3883
10.1103/PhysRevB.71.035206
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10.1103/PhysRevLett.84.1942
10.1103/PhysRevB.60.1551
{'key': 'PhysRevLett.96.246401Cc10R1', 'first-page': '2637', 'volume': '14', 'author': 'J. Lento', 'year': '2002', 'journal-title': 'J. Phys. Condens. Matter', 'ISSN': 'https://id.crossref.org/issn/0953-8984', 'issn-type': 'print'} / J. Phys. Condens. Matter by J. Lento (2002)
10.1103/PhysRevB.24.7412
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10.1088/0965-0393/13/1/R01
10.1103/PhysRevLett.44.593
10.1088/0953-8984/15/39/002
{'volume-title': 'Defects and Radiation Effects in Semiconductors-1978', 'year': '1979', 'author': 'L.\u2009C. Kimerling', 'key': 'PhysRevLett.96.246401Cc25R1'} / Defects and Radiation Effects in Semiconductors-1978 by L. C. Kimerling (1979)
10.1143/JJAP.27.L1414
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10.1103/PhysRevB.25.2627

Dates

Type	When
Created	19 years, 2 months ago (June 19, 2006, 6:41 p.m.)
Deposited	7 months, 2 weeks ago (Jan. 2, 2025, 6:24 p.m.)
Indexed	2 weeks, 5 days ago (Aug. 2, 2025, 12:34 a.m.)
Issued	19 years, 2 months ago (June 19, 2006)
Published	19 years, 2 months ago (June 19, 2006)
Published Online	19 years, 2 months ago (June 19, 2006)

Funders 0

None

BibTeX

@article{Schultz_2006, title={Theory of Defect Levels and the “Band Gap Problem” in Silicon}, volume={96}, ISSN={1079-7114}, url={http://dx.doi.org/10.1103/physrevlett.96.246401}, DOI={10.1103/physrevlett.96.246401}, number={24}, journal={Physical Review Letters}, publisher={American Physical Society (APS)}, author={Schultz, Peter A.}, year={2006}, month=jun }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        2
      ]
    ],
    "date-time": "2025-08-02T04:34:21Z",
    "timestamp": 1754109261372,
    "version": "3.32.0"
  },
  "reference-count": 30,
  "publisher": "American Physical Society (APS)",
  "issue": "24",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2006,
            6,
            19
          ]
        ],
        "date-time": "2006-06-19T00:00:00Z",
        "timestamp": 1150675200000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "http://link.aps.org/licenses/aps-default-license"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "DOI": "10.1103/physrevlett.96.246401",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2006,
        6,
        19
      ]
    ],
    "date-time": "2006-06-19T22:41:30Z",
    "timestamp": 1150756890000
  },
  "source": "Crossref",
  "is-referenced-by-count": 137,
  "title": "Theory of Defect Levels and the \u201cBand Gap Problem\u201d in Silicon",
  "prefix": "10.1103",
  "volume": "96",
  "author": [
    {
      "given": "Peter A.",
      "family": "Schultz",
      "sequence": "first",
      "affiliation": []
    }
  ],
  "member": "16",
  "published-online": {
    "date-parts": [
      [
        2006,
        6,
        19
      ]
    ]
  },
  "reference": [
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc1R1",
      "DOI": "10.1103/PhysRev.136.B864"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc2R1",
      "DOI": "10.1103/PhysRev.140.A1133"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc3R1",
      "DOI": "10.1116/1.1317812"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc4R1",
      "DOI": "10.1103/PhysRevB.12.575"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc5R1",
      "DOI": "10.1103/PhysRevLett.51.1888"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc5R2",
      "DOI": "10.1103/PhysRevB.32.3883"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc6R1",
      "DOI": "10.1103/PhysRevB.71.035206"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc7R1",
      "DOI": "10.1103/PhysRevLett.74.1131"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc8R1",
      "DOI": "10.1103/PhysRevLett.84.1942"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc9R1",
      "DOI": "10.1103/PhysRevB.60.1551"
    },
    {
      "key": "PhysRevLett.96.246401Cc10R1",
      "first-page": "2637",
      "volume": "14",
      "author": "J. Lento",
      "year": "2002",
      "journal-title": "J. Phys. Condens. Matter",
      "ISSN": "https://id.crossref.org/issn/0953-8984",
      "issn-type": "print"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc11R1",
      "DOI": "10.1103/PhysRevB.24.7412"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc12R1",
      "DOI": "10.1103/PhysRevLett.67.2339"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc12R2",
      "DOI": "10.1103/PhysRevB.47.6791"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc13R1",
      "DOI": "10.1103/PhysRevB.51.4014"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc14R1",
      "DOI": "10.1063/1.1749319"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc15R1",
      "DOI": "10.1103/PhysRevB.53.15513"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc16R1",
      "DOI": "10.1103/PhysRevB.70.195202"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc18R1",
      "DOI": "10.1103/PhysRevB.23.5048"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc19R1",
      "DOI": "10.1103/PhysRevB.43.8861"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc20R1",
      "DOI": "10.1103/PhysRevB.40.2980"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc21R1",
      "DOI": "10.1088/0965-0393/13/1/R01"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc23R1",
      "DOI": "10.1103/PhysRevLett.44.593"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc24R1",
      "DOI": "10.1088/0953-8984/15/39/002"
    },
    {
      "volume-title": "Defects and Radiation Effects in Semiconductors-1978",
      "year": "1979",
      "author": "L.\u2009C. Kimerling",
      "key": "PhysRevLett.96.246401Cc25R1"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc26R1",
      "DOI": "10.1143/JJAP.27.L1414"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc27R1",
      "DOI": "10.1103/PhysRevLett.48.1271"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc27R2",
      "DOI": "10.1103/PhysRevB.36.1094"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc28R1",
      "DOI": "10.1063/1.1735293"
    },
    {
      "doi-asserted-by": "publisher",
      "key": "PhysRevLett.96.246401Cc29R1",
      "DOI": "10.1103/PhysRevB.25.2627"
    }
  ],
  "container-title": "Physical Review Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "http://link.aps.org/article/10.1103/PhysRevLett.96.246401",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.96.246401/fulltext",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2025,
        1,
        2
      ]
    ],
    "date-time": "2025-01-02T23:24:59Z",
    "timestamp": 1735860299000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://link.aps.org/doi/10.1103/PhysRevLett.96.246401"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2006,
        6,
        19
      ]
    ]
  },
  "references-count": 30,
  "journal-issue": {
    "issue": "24",
    "published-print": {
      "date-parts": [
        [
          2006,
          6
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1103/PhysRevLett.96.246401",
  "relation": {},
  "ISSN": [
    "0031-9007",
    "1079-7114"
  ],
  "subject": [],
  "container-title-short": "Phys. Rev. Lett.",
  "published": {
    "date-parts": [
      [
        2006,
        6,
        19
      ]
    ]
  },
  "article-number": "246401"
}