DOI: 10.1103/physrevlett.76.2519. Existence of Electronic Excitation Enhanced Crystallization in GeSb Amorphous Thin Films upon Ultrashort Laser Pulse Irradiation

Existence of Electronic Excitation Enhanced Crystallization in GeSb Amorphous Thin Films upon Ultrashort Laser Pulse Irradiation

10.1103/physrevlett.76.2519

Crossref journal-article

American Physical Society (APS)

Physical Review Letters (16)

Bibliography

Solis, J., Afonso, C. N., Hyde, S. C. W., Barry, N. P., & French, P. M. W. (1996). Existence of Electronic Excitation Enhanced Crystallization in GeSb Amorphous Thin Films upon Ultrashort Laser Pulse Irradiation. Physical Review Letters, 76(14), 2519â2522.

Authors 5

J. Solis (first)
C. N. Afonso (additional)
S. C. W. Hyde (additional)
N. P. Barry (additional)
P. M. W. French (additional)

References 20 Referenced 63

10.1103/PhysRevLett.60.1438 / Phys. Rev. Lett. by H. W. K. Tom (1988)
10.1103/PhysRevB.49.16403 / Phys. Rev. B by Y. Siegal (1994)
10.1103/PhysRevB.46.6864 / Phys. Rev. B by S. V. Govorkov (1992)
10.1103/PhysRevLett.67.1023 / Phys. Rev. Lett. by P. Saeta (1991)
10.1103/PhysRevB.40.11986 / Phys. Rev. B by D. H. Reitze (1989)
10.1103/PhysRevLett.54.2151 / Phys. Rev. Lett. by J. A. Kash (1985)
{'volume-title': 'Laser and Electron Beam Processing of Semiconductors,', 'year': '1980', 'author': 'J. A. Van Vechten', 'key': 'PhysRevLett.76.2519Cc7R1'} / Laser and Electron Beam Processing of Semiconductors, by J. A. Van Vechten (1980)
10.1016/0375-9601(79)90242-1 / Phys. Lett. by J. A. Van Vechten (1979)
10.1016/0022-3093(88)90439-5 / J. Non-Cryst. Solids by W. Sinke (1988)
10.1103/PhysRevB.44.1546 / Phys. Rev. B by M. G. Grimaldi (1991)
10.1080/01411598908208099 / Phase Trans. by J. Marfaing (1989)
10.1063/1.106772 / Appl. Phys. Lett. by C. N. Afonso (1992)
10.1063/1.356584 / J. Appl. Phys. by J. Solis (1994)
10.1016/0921-5093(93)90241-6 / Mater. Sci. Eng. by C. N. Afonso (1993)
10.1364/OL.20.000160 / Opt. Lett. by S. C. W. Hyde (1995)
10.1007/BF01538380 / Appl. Phys. by W. Szysko (1995)
10.1116/1.576265 / J. Vac. Sci. Technol. A by D. G. Cahill (1989)
10.1115/1.2911378 / Trans. ASME by T. Q. Qui (1993)
10.1016/S0022-3093(05)80171-1 / J. Non-Cryst. Solids by D. Hulin (1991)
10.1016/S0022-3093(05)80172-3 / J. Non-Cryst. Solids by M. Wraback (1991)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:33 p.m.)
Deposited	7 months, 2 weeks ago (Jan. 2, 2025, 10 p.m.)
Indexed	7 months, 2 weeks ago (Jan. 2, 2025, 11:10 p.m.)
Issued	29 years, 4 months ago (April 1, 1996)
Published	29 years, 4 months ago (April 1, 1996)
Published Online	29 years, 4 months ago (April 1, 1996)

Funders 0

None

BibTeX

@article{Solis_1996, title={Existence of Electronic Excitation Enhanced Crystallization in GeSb Amorphous Thin Films upon Ultrashort Laser Pulse Irradiation}, volume={76}, ISSN={1079-7114}, url={http://dx.doi.org/10.1103/physrevlett.76.2519}, DOI={10.1103/physrevlett.76.2519}, number={14}, journal={Physical Review Letters}, publisher={American Physical Society (APS)}, author={Solis, J. and Afonso, C. N. and Hyde, S. C. W. and Barry, N. P. and French, P. M. W.}, year={1996}, month=apr, pages={2519–2522} }

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