DOI: 10.1103/physrevlett.75.4254. Observation of a Distributed Epitaxial Oxide in Thermally Grown Si<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>on Si(001)

Observation of a Distributed Epitaxial Oxide in Thermally Grown SiO2on Si(001)

10.1103/physrevlett.75.4254

Crossref journal-article

American Physical Society (APS)

Physical Review Letters (16)

Bibliography

Munkholm, A., Brennan, S., Comin, F., & Ortega, L. (1995). Observation of a Distributed Epitaxial Oxide in Thermally Grown SiO2on Si(001). Physical Review Letters, 75(23), 4254â4257.

Authors 4

A. Munkholm (first)
S. Brennan (additional)
F. Comin (additional)
L. Ortega (additional)

References 13 Referenced 47

10.1080/13642818908211190 / Philos. Mag. B by N. F. Mott (1989)
10.1149/1.2127482 / J. Electrochem. Soc. by W. A. Tiller (1981)
10.1149/1.2119739 / J. Electrochem. Soc. by W. A. Tiller (1983)
10.1080/00018738600101891 / Adv. Phys. by R. Rochet (1986)
10.1103/PhysRevLett.59.213 / Phys. Rev. Lett. by A. Ourmazd (1987)
10.1103/PhysRevLett.60.600 / Phys. Rev. Lett. by P. H. Fuoss (1988)
10.1063/1.104418 / Appl. Phys. Lett. by G. Renaud (1991)
10.1063/1.105695 / Appl. Phys. Lett. by T. A. Rabedeau (1991)
{'key': 'PhysRevLett.75.4254Cc8R1', 'first-page': '6', 'volume': '59', 'author': 'T. A. Rabedeau', 'year': '1991', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. by T. A. Rabedeau (1991)
10.1088/0022-3719/18/35/008 / Solid State Phys. by S. R. Andrews (1985)
10.1103/PhysRevB.33.3830 / Phys. Rev. B by I. K. Robinson (1986)
10.1088/0953-8984/5/36/007 / J. Phys. Condens. Matter by I. Takahashi (1993)
10.1016/0168-583X(94)00600-8 / Nucl. Instrum. Methods B by G. Renaud (1995)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:33 p.m.)
Deposited	8 months ago (Jan. 2, 2025, 9:40 p.m.)
Indexed	3 months ago (June 4, 2025, 4:27 p.m.)
Issued	29 years, 9 months ago (Dec. 4, 1995)
Published	29 years, 9 months ago (Dec. 4, 1995)
Published Online	29 years, 9 months ago (Dec. 4, 1995)

Funders 0

None

BibTeX

@article{Munkholm_1995, title={Observation of a Distributed Epitaxial Oxide in Thermally Grown Si<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>on Si(001)}, volume={75}, ISSN={1079-7114}, url={http://dx.doi.org/10.1103/physrevlett.75.4254}, DOI={10.1103/physrevlett.75.4254}, number={23}, journal={Physical Review Letters}, publisher={American Physical Society (APS)}, author={Munkholm, A. and Brennan, S. and Comin, F. and Ortega, L.}, year={1995}, month=dec, pages={4254–4257} }

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