DOI: 10.1103/physrevlett.64.1943. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

10.1103/physrevlett.64.1943

Crossref journal-article

American Physical Society (APS)

Physical Review Letters (16)

Bibliography

Eaglesham, D. J., & Cerullo, M. (1990). Dislocation-free Stranski-Krastanow growth of Ge on Si(100). Physical Review Letters, 64(16), 1943â1946.

Authors 2

D. J. Eaglesham (first)
M. Cerullo (additional)

References 24 Referenced 1,824

10.1524/zkri.1958.110.1-6.372 / Z. Kristallogr. by E. Bauer (1958)
10.1098/rspa.1949.0095 / Proc. Roy. Soc. London A by F. C. Frank (1949)
10.1515/zpch-1926-11927 / Z. Phys. Chem. by M. Volmer (1926)
{'key': 'PhysRevLett.64.1943Cc4R1', 'first-page': '797', 'volume': '146', 'author': 'I. N. Stranski', 'year': '1939', 'journal-title': 'Akad. Wiss. Lit. Mainz Math.-Natur. Kl. IIb'} / Akad. Wiss. Lit. Mainz Math.-Natur. Kl. IIb by I. N. Stranski (1939)
10.1080/14786436608213536 / Philos. Mag. by J. W. Matthews (1966)
10.1080/14786436408224212 / Philos. Mag. by D. W. Pashley (1964)
10.1063/1.102279 / Appl. Phys. Lett. by B. Elman (1989)
10.1016/0022-0248(74)90322-4 / J. Cryst. Growth by L. N. Aleksandrov (1974)
10.1016/0022-0248(71)90220-X / J. Cryst. Growth by A. G. Cullis (1971)
10.1103/PhysRevLett.47.1459 / Phys. Rev. Lett. by T. Narusawa (1981)
10.1016/0039-6028(85)90007-X / Surf. Sci. by H.-J. Gossman (1985)
10.1063/1.335886 / J. Appl. Phys. by M. Asai (1985)
10.1063/1.340067 / J. Appl. Phys. by K. Kataoka (1988)
{'volume-title': 'Chemistry and Defects in Semiconductor Heterostructures', 'year': '1989', 'author': 'K. Miki', 'key': 'PhysRevLett.64.1943Cc14R1'} / Chemistry and Defects in Semiconductor Heterostructures by K. Miki (1989)
10.1143/JJAP.28.L690 / Jpn. J. Appl. Phys. by Y. Koide (1989)
10.1103/PhysRevLett.63.632 / Phys. Rev. Lett. by M. Copel (1989)
10.1103/PhysRevLett.63.1826 / Phys. Rev. Lett. by F. K. LeGoues (1989)
10.1209/0295-5075/4/6/015 / Europhys. Lett. by R. Bruinsma (1987)
10.1063/1.97143 / Appl. Phys. Lett. by J. Bevk (1986)
10.1080/14786436808217735 / Philos. Mag. by W. A. Jesser (1968)
10.1063/1.97224 / Appl. Phys. Lett. by R. Hull (1986)
10.1063/1.96206 / Appl. Phys. Lett. by R. People (1985)
10.1063/1.97204 / Appl. Phys. Lett. by S. Luryi (1986)
10.1063/1.342834 / J. Appl. Phys. by E. A. Fitzgerald (1989)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:20 p.m.)
Deposited	7 months, 2 weeks ago (Jan. 2, 2025, 7:42 p.m.)
Indexed	2 weeks, 2 days ago (Aug. 6, 2025, 8:05 a.m.)
Issued	35 years, 4 months ago (April 16, 1990)
Published	35 years, 4 months ago (April 16, 1990)
Published Online	35 years, 4 months ago (April 16, 1990)

Funders 0

None

BibTeX

@article{Eaglesham_1990, title={Dislocation-free Stranski-Krastanow growth of Ge on Si(100)}, volume={64}, ISSN={0031-9007}, url={http://dx.doi.org/10.1103/physrevlett.64.1943}, DOI={10.1103/physrevlett.64.1943}, number={16}, journal={Physical Review Letters}, publisher={American Physical Society (APS)}, author={Eaglesham, D. J. and Cerullo, M.}, year={1990}, month=apr, pages={1943–1946} }

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