Crossref
journal-article
American Physical Society (APS)
Physical Review B (16)
References
10
Referenced
13
10.1103/PhysRevB.3.1262
/ Phys. Rev. B by J. B. Krieger (1971)10.1103/PhysRevB.5.1499
/ Phys. Rev. B by J. B. Krieger (1972)10.1007/BF01668909
/ Z. Phys. by M. Kohler (1948)10.1016/S0065-2539(08)60957-9
/ Adv. Electron. Electron Phys. by H. Brooks (1955)10.1016/0038-1098(66)90257-2
/ Solid State Commun. by E. J. Moore (1966)10.1103/PhysRev.160.607
/ Phys. Rev. by E. J. Moore (1967)10.1103/PhysRev.160.618
/ Phys. Rev. by E. J. Moore (1967)10.1103/PhysRevB.8.2780
/ Phys. Rev. B by J. B. Krieger (1973)10.1063/1.1729180
/ J. Appl. Phys. by P. W. Chapman (1963)10.1143/JPSJ.22.859
/ J. Phys. Soc. Jap. by C. Yamanouchi (1967)
Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 7:27 p.m.) |
Deposited | 8 years, 2 months ago (June 15, 2017, 1:16 a.m.) |
Indexed | 3 months, 1 week ago (May 9, 2025, 11:01 a.m.) |
Issued | 51 years, 4 months ago (April 15, 1974) |
Published | 51 years, 4 months ago (April 15, 1974) |
Published Online | 51 years, 4 months ago (April 15, 1974) |
@article{Krieger_1974, title={Resistivity of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-type degenerately doped silicon at low temperature: Dielectric-screening effects}, volume={9}, ISSN={0556-2805}, url={http://dx.doi.org/10.1103/physrevb.9.3627}, DOI={10.1103/physrevb.9.3627}, number={8}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Krieger, J. B. and Gruenebaum, J. and Meeks, T.}, year={1974}, month=apr, pages={3627–3629} }