DOI: 10.1103/physrevb.65.125206. Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach

Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach

10.1103/physrevb.65.125206

Crossref journal-article

American Physical Society (APS)

Physical Review B (16)

Bibliography

Camara, M. O. D., Mauger, A., & Devos, I. (2002). Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach. Physical Review B, 65(12).

Authors 3

M. O. D. Camara (first)
A. Mauger (additional)
I. Devos (additional)

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Dates

Type	When
Created	23 years ago (July 26, 2002, 8:05 p.m.)
Deposited	5 years, 5 months ago (March 4, 2020, 8:05 a.m.)
Indexed	1 month, 2 weeks ago (July 2, 2025, 4:09 p.m.)
Issued	23 years, 5 months ago (March 12, 2002)
Published	23 years, 5 months ago (March 12, 2002)
Published Online	23 years, 5 months ago (March 12, 2002)

Funders 0

None

BibTeX

@article{Camara_2002, title={Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach}, volume={65}, ISSN={1095-3795}, url={http://dx.doi.org/10.1103/physrevb.65.125206}, DOI={10.1103/physrevb.65.125206}, number={12}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Camara, M. O. D. and Mauger, A. and Devos, I.}, year={2002}, month=mar }

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