DOI: 10.1103/physrevb.64.195403. Intrinsic and H-induced defects at<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">S</mml:mi><mml:mi mathvariant="normal">i</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">S</mml:mi><mml:mi mathvariant="normal">i</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>interfaces

Intrinsic and H-induced defects atSi−SiO2interfaces

10.1103/physrevb.64.195403

Crossref journal-article

American Physical Society (APS)

Physical Review B (16)

Bibliography

Chadi, D. J. (2001). Intrinsic and H-induced defects atSiâSiO2interfaces. Physical Review B, 64(19).

Authors 1

D. J. Chadi (first)

References 27 Referenced 24

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10.1103/PhysRevLett.86.1777 / Phys. Rev. Lett. by T. Uchino (2001)
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10.1103/PhysRevB.50.5204 / Phys. Rev. B by A. Stesmans (1994)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 4:06 p.m.)
Deposited	7 years, 8 months ago (Dec. 9, 2017, 12:17 p.m.)
Indexed	3 months, 4 weeks ago (May 9, 2025, 11:28 a.m.)
Issued	23 years, 10 months ago (Oct. 17, 2001)
Published	23 years, 10 months ago (Oct. 17, 2001)
Published Online	23 years, 10 months ago (Oct. 17, 2001)

Funders 0

None

BibTeX

@article{Chadi_2001, title={Intrinsic and H-induced defects at<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">S</mml:mi><mml:mi mathvariant="normal">i</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">S</mml:mi><mml:mi mathvariant="normal">i</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>interfaces}, volume={64}, ISSN={1095-3795}, url={http://dx.doi.org/10.1103/physrevb.64.195403}, DOI={10.1103/physrevb.64.195403}, number={19}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Chadi, D. J.}, year={2001}, month=oct }

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