DOI: 10.1103/physrevb.59.9748. Yellow luminescence and related deep levels in unintentionally doped GaN films

Yellow luminescence and related deep levels in unintentionally doped GaN films

10.1103/physrevb.59.9748

Crossref journal-article

American Physical Society (APS)

Physical Review B (16)

Bibliography

Shalish, I., Kronik, L., Segal, G., Rosenwaks, Y., Shapira, Y., Tisch, U., & Salzman, J. (1999). Yellow luminescence and related deep levels in unintentionally doped GaN films. Physical Review B, 59(15), 9748â9751.

Authors 7

I. Shalish (first)
L. Kronik (additional)
G. Segal (additional)
Y. Rosenwaks (additional)
Yoram Shapira (additional)
U. Tisch (additional)
J. Salzman (additional)

References 25 Referenced 138

{'key': 'PhysRevB.59.9748Cc1R1', 'volume-title': 'The Blue Laser-Diode—GaN Based Light Emitters and Lasers', 'author': 'S. Nakamura', 'year': '1997'} / The Blue Laser-Diode—GaN Based Light Emitters and Lasers by S. Nakamura (1997)
10.1038/386351a0 / Nature (London) by F. A. Ponce (1997)
10.1109/5.469300 / Proc. IEEE by S. N. Mohammed (1995)
10.1143/JJAP.19.2395 / Jpn. J. Appl. Phys. by T. Ogino (1980)
10.1016/S0022-0248(97)00375-8 / J. Cryst. Growth by S. A. Safvi (1997)
10.1063/1.118174 / Appl. Phys. Lett. by X. Li (1997)
10.1103/PhysRevB.55.4689 / Phys. Rev. B by E. Calleja (1997)
10.1103/PhysRevB.51.13326 / Phys. Rev. B by E. R. Glaser (1995)
10.1116/1.1317922 / J. Vac. Sci. Technol. by H. C. Gatos (1973)
{'key': 'PhysRevB.59.9748Cc9R1', 'volume-title': 'Semiconductor Surfaces, 2nd ed', 'author': 'A. Many', 'year': '1971'} / Semiconductor Surfaces, 2nd ed by A. Many (1971)
10.1103/PhysRevB.50.1739 / Phys. Rev. B by M. Leibovitch (1994)
10.1103/PhysRevB.52.16 / Phys. Rev. B by D. M. Hoffman (1995)
10.1103/PhysRevLett.75.296 / Phys. Rev. Lett. by P. Perlin (1995)
10.1063/1.115098 / Appl. Phys. Lett. by T. Suski (1995)
10.1063/1.119598 / Appl. Phys. Lett. by P. Hacke (1997)
10.1016/S0022-0248(98)00189-4 / J. Cryst. Growth by P. Hacke (1998)
10.1016/S0038-1098(98)00048-9 / Solid State Commun. by D. C. Reynolds (1998)
10.1103/PhysRevB.56.6942 / Phys. Rev. B by H. M. Chen (1997)
10.1063/1.113235 / Appl. Phys. Lett. by W. Götz (1995)
{'key': 'PhysRevB.59.9748Cc18R1', 'volume-title': 'Gallium Nitride and Related Materials', 'author': 'M. Banas', 'year': '1996'} / Gallium Nitride and Related Materials by M. Banas (1996)
{'key': 'PhysRevB.59.9748Cc19R1', 'volume-title': 'III-V Nitrides', 'author': 'P. W. Mason', 'year': '1997'} / III-V Nitrides by P. W. Mason (1997)
10.1063/1.120297 / Appl. Phys. Lett. by E. F. Schubert (1997)
10.1063/1.365859 / J. Appl. Phys. by H. M. Chen (1997)
10.1063/1.121769 / Appl. Phys. Lett. by C. V. Reddy (1998)
10.1063/1.119673 / Appl. Phys. Lett. by E. Muńoz (1997)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:47 p.m.)
Deposited	7 years, 8 months ago (Dec. 9, 2017, 9:15 p.m.)
Indexed	2 months, 3 weeks ago (May 27, 2025, 3:47 a.m.)
Issued	26 years, 4 months ago (April 15, 1999)
Published	26 years, 4 months ago (April 15, 1999)
Published Online	26 years, 4 months ago (April 15, 1999)

Funders 0

None

BibTeX

@article{Shalish_1999, title={Yellow luminescence and related deep levels in unintentionally doped GaN films}, volume={59}, ISSN={1095-3795}, url={http://dx.doi.org/10.1103/physrevb.59.9748}, DOI={10.1103/physrevb.59.9748}, number={15}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Shalish, I. and Kronik, L. and Segal, G. and Rosenwaks, Y. and Shapira, Yoram and Tisch, U. and Salzman, J.}, year={1999}, month=apr, pages={9748–9751} }

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