DOI: 10.1103/physrevb.58.2539. Interatomic potential for silicon defects and disordered phases

Interatomic potential for silicon defects and disordered phases

10.1103/physrevb.58.2539

Crossref journal-article

American Physical Society (APS)

Physical Review B (16)

Bibliography

Justo, J. F., Bazant, M. Z., Kaxiras, E., Bulatov, V. V., & Yip, S. (1998). Interatomic potential for silicon defects and disordered phases. Physical Review B, 58(5), 2539â2550.

Authors 5

João F. Justo (first)
Martin Z. Bazant (additional)
Efthimios Kaxiras (additional)
V. V. Bulatov (additional)
Sidney Yip (additional)

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Dates

Type	When
Created	23 years ago (July 26, 2002, 5:47 p.m.)
Deposited	7 years, 8 months ago (Dec. 9, 2017, 4:15 p.m.)
Indexed	2 days, 1 hour ago (Aug. 20, 2025, 9:23 a.m.)
Issued	27 years ago (Aug. 1, 1998)
Published	27 years ago (Aug. 1, 1998)
Published Online	27 years ago (Aug. 1, 1998)

Funders 0

None

BibTeX

@article{Justo_1998, title={Interatomic potential for silicon defects and disordered phases}, volume={58}, ISSN={1095-3795}, url={http://dx.doi.org/10.1103/physrevb.58.2539}, DOI={10.1103/physrevb.58.2539}, number={5}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Justo, João F. and Bazant, Martin Z. and Kaxiras, Efthimios and Bulatov, V. V. and Yip, Sidney}, year={1998}, month=aug, pages={2539–2550} }

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