DOI: 10.1103/physrevb.50.14246. Exchange interaction of excitons in GaAs heterostructures

Exchange interaction of excitons in GaAs heterostructures

10.1103/physrevb.50.14246

Crossref journal-article

American Physical Society (APS)

Physical Review B (16)

Bibliography

Blackwood, E., Snelling, M. J., Harley, R. T., Andrews, S. R., & Foxon, C. T. B. (1994). Exchange interaction of excitons in GaAs heterostructures. Physical Review B, 50(19), 14246â14254.

Authors 5

E. Blackwood (first)
M. J. Snelling (additional)
R. T. Harley (additional)
S. R. Andrews (additional)
C. T. B. Foxon (additional)

References 17 Referenced 158

10.1007/BF02454213 / Nuovo Cimento D by L. C. Andreani (1988)
10.1103/PhysRevB.41.7536 / Phys. Rev. B by L. C. Andreani (1990)
10.1016/0038-1098(90)90959-F / Solid State Commun. by U. Rossler (1990)
10.1103/PhysRevB.47.15776 / Phys. Rev. B by M. Z. Maialle (1993)
10.1103/PhysRevB.39.1970 / Phys. Rev. B by B. Rejaei Salmassi (1989)
10.1103/PhysRevB.41.5283 / Phys. Rev. B by H. W. van Kesteren (1990)
10.1103/PhysRevB.20.3303 / Phys. Rev. B by W. Ekardt (1979)
10.1088/0268-1242/2/9/006 / Semicond. Sci. Technol. by J. W. Orton (1987)
10.1103/PhysRevB.43.2458 / Phys. Rev. B by J. M. Trombetta (1991)
10.1103/PhysRevB.44.11345 / Phys. Rev. B by M. J. Snelling (1991)
10.1103/PhysRevB.45.3922 / Phys. Rev. B by M. J. Snelling (1992)
{'key': 'PhysRevB.50.14246Cc13R1', 'volume-title': 'Proceedings of the Eighteenth International Conference on the Physics of Semiconductors, Stockholm, 1986', 'author': 'R. Bauer', 'year': '1987'} / Proceedings of the Eighteenth International Conference on the Physics of Semiconductors, Stockholm, 1986 by R. Bauer (1987)
10.1103/PhysRevB.37.6429 / Phys. Rev. B by Y. Chen (1988)
10.1016/0039-6028(90)90857-5 / Surf. Sci. by M. Potemski (1990)
10.1103/PhysRevLett.68.349 / Phys. Rev. Lett. by S. Bar-Ad (1992)
10.1098/rspa.1961.0211 / Proc. R. Soc. London Ser. A by R. Orbach (1961)
10.1063/1.339299 / J. Appl. Phys. by G. Ji. D. Huang (1987)

Dates

Type	When
Created	23 years ago (July 26, 2002, 11:35 p.m.)
Deposited	8 years, 2 months ago (June 15, 2017, 5:21 a.m.)
Indexed	4 months, 1 week ago (April 11, 2025, 1:27 p.m.)
Issued	30 years, 9 months ago (Nov. 15, 1994)
Published	30 years, 9 months ago (Nov. 15, 1994)
Published Online	30 years, 9 months ago (Nov. 15, 1994)

Funders 0

None

BibTeX

@article{Blackwood_1994, title={Exchange interaction of excitons in GaAs heterostructures}, volume={50}, ISSN={1095-3795}, url={http://dx.doi.org/10.1103/physrevb.50.14246}, DOI={10.1103/physrevb.50.14246}, number={19}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Blackwood, E. and Snelling, M. J. and Harley, R. T. and Andrews, S. R. and Foxon, C. T. B.}, year={1994}, month=nov, pages={14246–14254} }

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