DOI: 10.1103/physrevb.43.2058. Prediction of the effect of the sample biasing in scanning tunneling microscopy and of surface defects on the observed character of the dimers in the Si(001)-(2×1) surface

Prediction of the effect of the sample biasing in scanning tunneling microscopy and of surface defects on the observed character of the dimers in the Si(001)-(2×1) surface

10.1103/physrevb.43.2058

Crossref journal-article

American Physical Society (APS)

Physical Review B (16)

Bibliography

Badziag, P., Verwoerd, W. S., & Van Hove, M. A. (1991). Prediction of the effect of the sample biasing in scanning tunneling microscopy and of surface defects on the observed character of the dimers in the Si(001)-(2Ã1) surface. Physical Review B, 43(3), 2058â2062.

Authors 3

Piotr Badziag (first)
Wynand S. Verwoerd (additional)
Michel A. Van Hove (additional)

References 39 Referenced 33

{'key': 'PhysRevB.43.2058Cc1R1', 'volume-title': 'Semiconductor Surface Physics', 'author': 'R. E. Schlier', 'year': '1957'} / Semiconductor Surface Physics by R. E. Schlier (1957)
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Dates

Type	When
Created	23 years ago (July 26, 2002, 6:53 p.m.)
Deposited	8 years, 2 months ago (June 15, 2017, 1 a.m.)
Indexed	1 year, 9 months ago (Oct. 26, 2023, 8:59 p.m.)
Issued	34 years, 7 months ago (Jan. 15, 1991)
Published	34 years, 7 months ago (Jan. 15, 1991)
Published Online	34 years, 7 months ago (Jan. 15, 1991)

Funders 0

None

BibTeX

@article{Badziag_1991, title={Prediction of the effect of the sample biasing in scanning tunneling microscopy and of surface defects on the observed character of the dimers in the Si(001)-(2×1) surface}, volume={43}, ISSN={1095-3795}, url={http://dx.doi.org/10.1103/physrevb.43.2058}, DOI={10.1103/physrevb.43.2058}, number={3}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Badziag, Piotr and Verwoerd, Wynand S. and Van Hove, Michel A.}, year={1991}, month=jan, pages={2058–2062} }

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