DOI: 10.1103/physrevb.37.4292. Tunneling microscopy of 2<i>H</i>-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">MoS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>: A compound semiconductor surface

Tunneling microscopy of 2H-MoS2: A compound semiconductor surface

10.1103/physrevb.37.4292

Crossref journal-article

American Physical Society (APS)

Physical Review B (16)

Bibliography

Weimer, M., Kramar, J., Bai, C., & Baldeschwieler, J. D. (1988). Tunneling microscopy of 2H-MoS2: A compound semiconductor surface. Physical Review B, 37(8), 4292â4295.

Authors 4

M. Weimer (first)
J. Kramar (additional)
C. Bai (additional)
J. D. Baldeschwieler (additional)

References 17 Referenced 62

{'key': 'PhysRevB.37.4292Cc1R1', 'first-page': '355', 'volume': '30', 'author': 'G. Binnig', 'year': '1986', 'journal-title': 'IBM J. Res. Dev.'} / IBM J. Res. Dev. by G. Binnig (1986)
10.1103/PhysRevLett.58.1192 / Phys. Rev. Lett. by R. M. Feenstra (1987)
10.1016/0039-6028(87)90147-6 / Surf. Sci. by R. V. Coleman (1987)
10.1103/PhysRevB.34.994 / Phys. Rev. B by C. G. Slough (1986)
10.1103/PhysRevLett.55.394 / Phys. Rev. Lett. by R. V. Coleman (1985)
10.1143/JJAP.26.L41 / Jpn. J. Appl. Phys. by H. Bando (1987)
10.1103/PhysRevLett.57.444 / Phys. Rev. Lett. by J. M. Soler (1986)
10.1063/1.96682 / Appl. Phys. Lett. by A. Bryant (1986)
10.1021/ja01659a020 / J. Am. Chem. Soc. by R. G. Dickinson (1923)
10.1088/0022-3719/8/1/004 / J. Phys. C by A. J. Grant (1975)
10.1063/1.1138973 / Rev. Sci. Instrum. by Ch. Gerber (1986)
10.1103/PhysRevB.36.4491 / Phys. Rev. B by H. A. Mizes (1987)
10.1103/PhysRevB.31.805 / Phys. Rev. B by J. Tersoff (1985)
10.1103/PhysRevLett.50.1998 / Phys. Rev. Lett. by J. Tersoff (1983)
{'volume-title': 'Electronic Structure and Electronic Transitions in Layered Materials', 'year': '1986', 'author': 'E. Doni', 'key': 'PhysRevB.37.4292Cc12R1'} / Electronic Structure and Electronic Transitions in Layered Materials by E. Doni (1986)
10.1103/PhysRevB.35.6195 / Phys. Rev. B by R. Coehoorn (1987)
{'volume-title': 'Physics of Semiconductors—1978', 'year': '1979', 'author': 'A. Koma', 'key': 'PhysRevB.37.4292Cc13R1'} / Physics of Semiconductors—1978 by A. Koma (1979)

Dates

Type	When
Created	23 years ago (July 26, 2002, 6:38 p.m.)
Deposited	8 years, 2 months ago (June 15, 2017, 12:51 a.m.)
Indexed	1 month, 2 weeks ago (July 7, 2025, 5:06 a.m.)
Issued	37 years, 5 months ago (March 15, 1988)
Published	37 years, 5 months ago (March 15, 1988)
Published Online	37 years, 5 months ago (March 15, 1988)

Funders 0

None

BibTeX

@article{Weimer_1988, title={Tunneling microscopy of 2H-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">MoS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>: A compound semiconductor surface}, volume={37}, ISSN={0163-1829}, url={http://dx.doi.org/10.1103/physrevb.37.4292}, DOI={10.1103/physrevb.37.4292}, number={8}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Weimer, M. and Kramar, J. and Bai, C. and Baldeschwieler, J. D.}, year={1988}, month=mar, pages={4292–4295} }

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