DOI: 10.1103/physrevb.29.2010. Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formation

Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formation

10.1103/physrevb.29.2010

Crossref journal-article

American Physical Society (APS)

Physical Review B (16)

Bibliography

Wittmer, M., & Tu, K. N. (1984). Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formation. Physical Review B, 29(4), 2010â2020.

Authors 2

M. Wittmer (first)
K. N. Tu (additional)

References 38 Referenced 85

10.1063/1.324599 / J. Appl. Phys. by M. Wittmer (1978)
10.1063/1.330066 / J, Appl. Phys. by M. Wittmer (1982)
10.1063/1.92250 / Appl. Phys. Lett. by I. Ohdomari (1981)
10.1109/T-ED.1980.19878 / IEEE Trans. Electron Devices by J. B. Bindell (1980)
10.1063/1.331155 / J. Appl. Phys. by A. Kikuchi (1982)
10.1063/1.332579 / J. Appl. Phys. by A. Kikuchi (1983)
10.1063/1.332077 / J. Appl. Phys. by M. Wittmer (1983)
10.1063/1.330439 / J. Appl. Phys. by S. S. Cohen (1982)
{'key': 'PhysRevB.29.2010Cc10R1', 'volume-title': 'Backscattering Spectrometry', 'author': 'W.-K. Chu', 'year': '1978'} / Backscattering Spectrometry by W.-K. Chu (1978)
{'key': 'PhysRevB.29.2010Cc11R1', 'volume-title': 'Thin Films—Interdiffusion and Reactions', 'author': 'K. N. Tu', 'year': '1978'} / Thin Films—Interdiffusion and Reactions by K. N. Tu (1978)
10.1016/0040-6090(83)90561-8 / Thin Solid Films by M. Wittmer (1983)
{'key': 'PhysRevB.29.2010Cc13R1', 'volume-title': 'Ion Beam Surface Layer Analysis', 'author': 'J. F. Ziegler', 'year': '1976'} / Ion Beam Surface Layer Analysis by J. F. Ziegler (1976)
10.1063/1.328440 / J. Appl. Phys by H. Föll (1981)
10.1080/01418618208243901 / Philos. Mag. A by H. Föll (1982)
10.1016/0040-6090(82)90094-3 / Thin Solid Films by L. J. Chen (1982)
10.1016/0040-6090(82)90093-1 / Thin Solid Films by R. T. Tung (1982)
{'key': 'PhysRevB.29.2010Cc18R1', 'volume-title': 'Semiconductor Silicon', 'author': 'D. L. Kendall', 'year': '1969'} / Semiconductor Silicon by D. L. Kendall (1969)
{'key': 'PhysRevB.29.2010Cc19R1', 'volume-title': 'Weak Interaction Physics—1977 (Indiana University), Proceedings of the Conference on the Present Status of Weak Interaction Physics', 'author': 'H. J. Mayer', 'year': '1977'} / Weak Interaction Physics—1977 (Indiana University), Proceedings of the Conference on the Present Status of Weak Interaction Physics by H. J. Mayer (1977)
10.1103/PhysRevB.14.3551 / Phys. Rev. B by J. A. van Vechten (1976)
10.1116/1.570486 / J. Vac. Sci. Technol. by J. Angilello (1980)
10.1063/1.88436 / Appl. Phys. Lett. by K. N. Tu (1975)
10.1063/1.1655546 / Appl. Phys. Lett. by W. K. Chu (1974)
10.1016/0040-6090(75)90057-7 / Thin Solid Films by W. K. Chu (1975)
10.1063/1.89230 / Appl. Phys. Lett. by R. Pretorius (1977)
10.1016/0040-6090(78)90303-6 / Thin Solid Films by T. G. Finstad (1978)
10.1016/0029-554X(78)90941-2 / Nucl. Instrum Methods by R. Pretorius (1978)
10.1080/01418617808239171 / Philos. Mag. A by R. Pretorius (1978)
10.1016/0029-554X(80)91299-9 / Nucl. Instrum. Methods by J. E. E. Baglin (1980)
10.1063/1.329015 / J. Appl. Phys. by J. E. E. Baglin (1981)
10.1063/1.331453 / J. Appl. Phys. by F. D'Heurle (1982)
10.1016/0040-6090(78)90164-5 / Thin Solid Films by G. L. P. Berning (1978)
10.1103/PhysRevLett.45.120 / Phys. Rev. Lett. by N. W. Cheung (1980)
10.1103/PhysRevLett.46.671 / Phys. Rev. Lett. by N. W. Cheung (1981)
10.1116/1.570618 / J. Vac. Sci. Technol. by P. J. Grunthaner (1980)
10.1103/PhysRevB.26.4766 / Phys. Rev. B by Y.-J. Chang (1982)
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10.1063/1.330067 / J. Appl. Phys. by D. A. Antoniadis (1982)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 11:22 p.m.)
Deposited	7 years, 8 months ago (Dec. 10, 2017, 2:03 a.m.)
Indexed	1 year, 3 months ago (May 14, 2024, 11:11 p.m.)
Issued	41 years, 6 months ago (Feb. 15, 1984)
Published	41 years, 6 months ago (Feb. 15, 1984)
Published Online	41 years, 6 months ago (Feb. 15, 1984)

Funders 0

None

BibTeX

@article{Wittmer_1984, title={Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formation}, volume={29}, ISSN={0163-1829}, url={http://dx.doi.org/10.1103/physrevb.29.2010}, DOI={10.1103/physrevb.29.2010}, number={4}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Wittmer, M. and Tu, K. N.}, year={1984}, month=feb, pages={2010–2020} }

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