Crossref
journal-article
American Physical Society (APS)
Physical Review B (16)
References
23
Referenced
36
10.1098/rspa.1957.0138
/ Proc. R. Soc. London Ser. A by C. A. Coulson (1957)10.1143/JPSJ.17.1359
/ J. Phys. Soc. Jpn. by T. Yamaguchi (1962){'key': 'PhysRevB.24.955Cc3R1', 'first-page': '22', 'volume': 'II', 'author': 'G. D. Watkins', 'year': '1963', 'journal-title': 'J. Phys. Soc. Jpn., Suppl.'}
/ J. Phys. Soc. Jpn., Suppl. by G. D. Watkins (1963){'key': 'PhysRevB.24.955Cc3R2', 'volume-title': 'Effet des Rayonnements sur les Semiconducteurs', 'author': 'G. D. Watkins', 'year': '1964'}
/ Effet des Rayonnements sur les Semiconducteurs by G. D. Watkins (1964)10.1016/S0022-3697(71)80403-1
/ J. Phys. Chem. Sol. by C. A. Coulson (1971)10.1103/PhysRevLett.32.1244
/ Phys. Rev. Lett. by G. D. Watkins (1974){'key': 'PhysRevB.24.955Cc5R2', 'volume-title': 'Lattice Defects in Semiconductors, Freiburg, 1974', 'author': 'R. P. Messmer', 'year': '1975'}
/ Lattice Defects in Semiconductors, Freiburg, 1974 by R. P. Messmer (1975)10.1016/0022-4596(77)90020-2
/ Solid State Commun. by G. T. Surratt (1977){'key': 'PhysRevB.24.955Cc7R1', 'volume-title': 'International Conference on Radiation Effects in Semiconductors, Nice, 1978', 'author': 'M. Lannoo', 'year': '1979'}
/ International Conference on Radiation Effects in Semiconductors, Nice, 1978 by M. Lannoo (1979)10.1007/BF00551551
/ Theor, Chim. Acta by T. Ziegler (1977)10.1103/PhysRevA.20.1693
/ Phys. Rev. A by U. von Barth (1979)10.1103/PhysRevB.24.943
/ Phys. Rev. B by M. Lannoo (1981)10.1103/PhysRevLett.41.892
/ Phys. Rev. Lett. by G. A. Baraff (1978)10.1103/PhysRevB.19.4965
/ Phys. Rev. B by G. A. Baraff (1979)10.1103/PhysRevB.20.4363
/ Phys. Rev. B by G. A. Baraff (1979)10.1103/PhysRevLett.41.895
/ Phys. Rev. Lett. by J. Bernholc (1978)10.1098/rspa.1957.0010
/ Proc. R. Soc. London Ser. A by U. Opik (1957)10.1103/PhysRev.164.1056
/ Phys. Rev. by J. Friedel (1967){'key': 'PhysRevB.24.955Cc14R2', 'first-page': '391', 'volume': '3', 'author': 'M. Lannoo', 'year': '1968', 'journal-title': 'Ann. Phys. (Paris)'}
/ Ann. Phys. (Paris) by M. Lannoo (1968)10.1088/0022-3719/9/12/015
/ J. Phys. C by E. Kauffer (1977)10.1103/PhysRevLett.43.956
/ Phys. Rev. Lett. by G. A. Baraff (1979)10.1103/PhysRevB.21.5662
/ Phys. Rev. B by G. A. Baraff (1980){'key': 'PhysRevB.24.955Cc17R1', 'volume-title': 'The Theory of Transition Metal Ions', 'author': 'J. S. Griffith', 'year': '1971'}
/ The Theory of Transition Metal Ions by J. S. Griffith (1971)
Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 7:14 p.m.) |
Deposited | 8 years, 2 months ago (June 15, 2017, 1:10 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 3, 2024, 11:04 a.m.) |
Issued | 44 years, 1 month ago (July 15, 1981) |
Published | 44 years, 1 month ago (July 15, 1981) |
Published Online | 44 years, 1 month ago (July 15, 1981) |
@article{Lannoo_1981, title={Multiplet splittings and Jahn-Teller energies for the vacancy in silicon}, volume={24}, ISSN={0163-1829}, url={http://dx.doi.org/10.1103/physrevb.24.955}, DOI={10.1103/physrevb.24.955}, number={2}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Lannoo, M. and Baraff, G. A. and Schlüter, M.}, year={1981}, month=jul, pages={955–963} }