DOI: 10.1103/physrevb.24.4552. Structural and electronic properties of cleaved Si(111) upon room-temperature formation of an interface with Ag

Structural and electronic properties of cleaved Si(111) upon room-temperature formation of an interface with Ag

10.1103/physrevb.24.4552

Crossref journal-article

American Physical Society (APS)

Physical Review B (16)

Bibliography

Bolmont, D., Chen, P., Sebenne, C. A., & Proix, F. (1981). Structural and electronic properties of cleaved Si(111) upon room-temperature formation of an interface with Ag. Physical Review B, 24(8), 4552â4559.

Authors 4

D. Bolmont (first)
Ping Chen (additional)
C. A. Sebenne (additional)
F. Proix (additional)

References 17 Referenced 79

{'key': 'PhysRevB.24.4552Cc1R1', 'volume-title': 'Handbook on Semiconductors', 'year': '1980'} / Handbook on Semiconductors (1980)
10.1016/0040-6090(72)90412-9 / Thin Solid Films by E. Bauer (1972)
10.1016/0039-6028(67)90121-5 / Surf. Sci. by K. Spiegel (1967)
10.1016/0040-6090(76)90195-4 / Thin Solid Films by G. Le Lay (1976)
{'key': 'PhysRevB.24.4552Cc5R2', 'first-page': '283', 'volume': '35', 'author': 'G. Le Lay', 'year': '1976', 'journal-title': 'Thin Solid Films'} / Thin Solid Films by G. Le Lay (1976)
10.1016/0039-6028(78)90304-7 / Surf. Sci. by G. Le Lay (1978)
10.1016/0039-6028(78)90337-0 / Surf. Sci. by F. Wehking (1978)
10.1016/0039-6028(77)90203-5 / Surf. Sci. by M. Housley (1977)
10.1143/JJAP.16.2261 / Jpn. J. Appl. Phys. by S. Ino (1977)
10.1143/JJAP.17.2097 / Jpn. J. Appl. Phys. by Y. Gotoh (1978)
10.1051/jphyslet:019780039016028700 / J. Phys. (Paris) Lett. by J. Derrien (1978)
10.1016/0039-6028(80)90588-9 / Surf. Sci. by J. P. Gaspard (1980)
10.1088/0022-3719/12/12/030 / J. Phys. C by A. McKinley (1979)
10.1088/0022-3719/8/5/012 / J. Phys. C by A. Thanailakis (1975)
10.1016/0039-6028(76)90170-9 / Surf. Sci. by J. D. Van Otterloo (1976)
10.1103/PhysRevB.12.3280 / Phys. Rev. B by C. A. Sebenne (1975)
10.1007/BF02725822 / Nuovo Cimento by C. A. Sebenne (1977)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 11:14 p.m.)
Deposited	8 years, 2 months ago (June 15, 2017, 5:09 a.m.)
Indexed	1 year, 7 months ago (Feb. 4, 2024, 3:35 a.m.)
Issued	43 years, 10 months ago (Oct. 15, 1981)
Published	43 years, 10 months ago (Oct. 15, 1981)
Published Online	43 years, 10 months ago (Oct. 15, 1981)

Funders 0

None

BibTeX

@article{Bolmont_1981, title={Structural and electronic properties of cleaved Si(111) upon room-temperature formation of an interface with Ag}, volume={24}, ISSN={0163-1829}, url={http://dx.doi.org/10.1103/physrevb.24.4552}, DOI={10.1103/physrevb.24.4552}, number={8}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Bolmont, D. and Chen, Ping and Sebenne, C. A. and Proix, F.}, year={1981}, month=oct, pages={4552–4559} }

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