DOI: 10.1103/physrevb.12.2502. Diffusion and segregation of ion-implanted boron in silicon in dry oxygen ambients

Diffusion and segregation of ion-implanted boron in silicon in dry oxygen ambients

10.1103/physrevb.12.2502

Crossref journal-article

American Physical Society (APS)

Physical Review B (16)

Bibliography

Murarka, S. P. (1975). Diffusion and segregation of ion-implanted boron in silicon in dry oxygen ambients. Physical Review B, 12(6), 2502â2519.

Authors 1

S. P. Murarka (first)

References 28 Referenced 19

10.1002/j.1538-7305.1960.tb03947.x / Bell. Syst. Tech. J. by M. M. Atalla (1960)
10.1063/1.1702585 / J. Appl. Phys. by F. Leuenberger (1962)
10.1063/1.1713825 / J. Appl. Phys. by A. S. Grove (1964)
10.1143/JJAP.3.377 / Jpn. J. Appl. Phys. by T. Kato (1964)
10.1016/0038-1101(65)90165-6 / Solid State Electron. by K. J. S. Cave (1965)
10.1149/1.2426482 / J. Electrochem. Soc. by W. H. Chen (1967)
10.1149/1.2407389 / J. Electrochem. Soc. by J. S. T. Huang (1970)
10.1016/0038-1101(72)90137-2 / Solid State Electron. by P. R. Wilson (1972)
10.1149/1.2401865 / J. Electrochem. Soc. by R. H. Krambeck (1974)
10.1016/0038-1098(73)90869-7 / Solid State Commun. by G. Masetti (1973)
{'key': 'PhysRevB.12.2502Cc12R1', 'first-page': '346', 'volume': 'XLII', 'author': 'G. Masetti', 'year': '1973', 'journal-title': 'Alta Frequenza'} / Alta Frequenza by G. Masetti (1973)
{'key': 'PhysRevB.12.2502Cc13R1', 'first-page': '626', 'volume': 'XLII', 'author': 'G. Masetti', 'year': '1973', 'journal-title': 'Alta Frequenza'} / Alta Frequenza by G. Masetti (1973)
10.1149/1.2401892 / J. Electrochem. Soc. by J. L. Prince (1974)
10.1149/1.2412077 / J. Electrochem. Soc. by M. L. Barry (1969)
10.1016/0038-1101(69)90122-1 / Solid State Electron. by G. N. Wills (1969)
10.1109/PROC.1969.7320 / Proc. IEEE by K. E. Bean (1969)
10.1109/PROC.1970.7699 / Proc. IEEE by T. C. Chan (1970)
10.1143/JJAP.9.848 / Jpn. J. Appl. Phys. by M. Okamura (1970)
10.1016/0038-1101(71)90190-0 / Solid State Electron. by W. G. Allen (1971)
10.1063/1.1663459 / J. Appl. Phys. by S. M. Hu (1974)
10.1063/1.1713945 / J. Appl. Phys. by B. E. Deal (1965)
{'key': 'PhysRevB.12.2502Cc25R1', 'volume-title': 'Physics and Technology of Semiconductor Devices', 'author': 'A. S. Grove', 'year': '1967'} / Physics and Technology of Semiconductor Devices by A. S. Grove (1967)
{'key': 'PhysRevB.12.2502Cc26R1', 'volume-title': 'Proceedings of the Second International Conference on Ion Implantation in Semiconductors Garmisch-Partenkirchen, West Germany', 'author': 'T. E. Seidel', 'year': '1971'} / Proceedings of the Second International Conference on Ion Implantation in Semiconductors Garmisch-Partenkirchen, West Germany by T. E. Seidel (1971)
10.1002/j.1538-7305.1962.tb02415.x / Bell Syst. Tech. J. by J. C. Irvin (1962)
{'key': 'PhysRevB.12.2502Cc29R1', 'volume-title': 'Atomic Diffusion in Semiconductors', 'author': 'S. M. Hu', 'year': '1973'} / Atomic Diffusion in Semiconductors by S. M. Hu (1973)
10.1016/0038-1101(70)90047-X / Solid State Electron. by N. D. Thai (1970)
10.1063/1.1662589 / J. Appl. Phys. by R. K. Jain (1973)
10.1080/14786436908228058 / Philos. Mag. by I. R. Sanders (1969)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:26 p.m.)
Deposited	7 years, 8 months ago (Dec. 9, 2017, 6:08 p.m.)
Indexed	4 months, 2 weeks ago (April 19, 2025, 12:49 a.m.)
Issued	49 years, 11 months ago (Sept. 15, 1975)
Published	49 years, 11 months ago (Sept. 15, 1975)
Published Online	49 years, 11 months ago (Sept. 15, 1975)

Funders 0

None

BibTeX

@article{Murarka_1975, title={Diffusion and segregation of ion-implanted boron in silicon in dry oxygen ambients}, volume={12}, ISSN={0556-2805}, url={http://dx.doi.org/10.1103/physrevb.12.2502}, DOI={10.1103/physrevb.12.2502}, number={6}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Murarka, S. P.}, year={1975}, month=sep, pages={2502–2519} }

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