DOI: 10.1103/physrevapplied.10.044011. Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Ta</mml:mi><mml:mtext>−</mml:mtext><mml:mrow><mml:mrow><mml:mi mathvariant="normal">B</mml:mi></mml:mrow></mml:mrow></mml:math> Spin Hall Electrode

Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a Ta−B Spin Hall Electrode

10.1103/physrevapplied.10.044011

Crossref journal-article

American Physical Society (APS)

Physical Review Applied (16)

Bibliography

Kato, Y., Saito, Y., Yoda, H., Inokuchi, T., Shirotori, S., Shimomura, N., Oikawa, S., Tiwari, A., Ishikawa, M., Shimizu, M., Altansargai, B., Sugiyama, H., Koi, K., Ohsawa, Y., & Kurobe, A. (2018). Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a TaâB Spin Hall Electrode. Physical Review Applied, 10(4).

Authors 15

Y. Kato (first)
Y. Saito (additional)
H. Yoda (additional)
T. Inokuchi (additional)
S. Shirotori (additional)
N. Shimomura (additional)
S. Oikawa (additional)
A. Tiwari (additional)
M. Ishikawa (additional)
M. Shimizu (additional)
B. Altansargai (additional)
H. Sugiyama (additional)
K. Koi (additional)
Y. Ohsawa (additional)
A. Kurobe (additional)

References 37 Referenced 31

10.1016/0304-8853(96)00062-5
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Dates

Type	When
Created	6 years, 10 months ago (Oct. 3, 2018, 9:18 a.m.)
Deposited	6 years, 10 months ago (Oct. 3, 2018, 9:18 a.m.)
Indexed	3 weeks ago (Aug. 2, 2025, 12:49 a.m.)
Issued	6 years, 10 months ago (Oct. 3, 2018)
Published	6 years, 10 months ago (Oct. 3, 2018)
Published Online	6 years, 10 months ago (Oct. 3, 2018)

Funders 1

Council for Science, Technology and Innovation 10.13039/501100009538
Region: Asia
gov (Local government)
Labels1
1. CSTI

BibTeX

@article{Kato_2018, title={Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Ta</mml:mi><mml:mtext>−</mml:mtext><mml:mrow><mml:mrow><mml:mi mathvariant="normal">B</mml:mi></mml:mrow></mml:mrow></mml:math> Spin Hall Electrode}, volume={10}, ISSN={2331-7019}, url={http://dx.doi.org/10.1103/physrevapplied.10.044011}, DOI={10.1103/physrevapplied.10.044011}, number={4}, journal={Physical Review Applied}, publisher={American Physical Society (APS)}, author={Kato, Y. and Saito, Y. and Yoda, H. and Inokuchi, T. and Shirotori, S. and Shimomura, N. and Oikawa, S. and Tiwari, A. and Ishikawa, M. and Shimizu, M. and Altansargai, B. and Sugiyama, H. and Koi, K. and Ohsawa, Y. and Kurobe, A.}, year={2018}, month=oct }

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