Crossref journal-article
The Royal Society
Philosophical Transactions of the Royal Society of London. Series A: Physical and Engineering Sciences (175)
Abstract

The two main computational techniques to calculate the microscopic electronic structure of localized defects in solids are reviewed. Cluster calculations using the Hartree-Fock method as well as density-functional methods have been widely used to determine the equilibrium structure of hydrogen and hydrogen-related complexes in semiconductors. Results for the structure of both acceptor-hydrogen and donor-hydrogen pairs in silicon obtained by various methods and at different levels of approximations are discussed. Comparisons are made among the cal­culated vibrational frequencies of hydrogen in these passivation complexes. The spin density distribution for bond-centred hydrogen or muonium in diamond is investigated. Owing to the light masses of the proton and the muon it is neces­sary to average the computed hyperfme parameters over the finite extension of the ground-state wave function.

Bibliography

Computational studies of hydrogen-related complexes in semiconductors. (1995). Philosophical Transactions of the Royal Society of London. Series A: Physical and Engineering Sciences, 350(1693), 203–214.

Dates
Type When
Created 18 years, 8 months ago (Dec. 18, 2006, 2:53 p.m.)
Deposited 4 years, 6 months ago (Feb. 20, 2021, 4:12 p.m.)
Indexed 3 years, 4 months ago (April 4, 2022, 1:34 a.m.)
Issued 30 years, 6 months ago (Feb. 15, 1995)
Published 30 years, 6 months ago (Feb. 15, 1995)
Published Online 28 years, 8 months ago (Jan. 1, 1997)
Published Print 30 years, 6 months ago (Feb. 15, 1995)
Funders 0

None

@article{1995, volume={350}, ISSN={2054-0299}, url={http://dx.doi.org/10.1098/rsta.1995.0008}, DOI={10.1098/rsta.1995.0008}, number={1693}, journal={Philosophical Transactions of the Royal Society of London. Series A: Physical and Engineering Sciences}, publisher={The Royal Society}, year={1995}, month=feb, pages={203–214} }