DOI: 10.1093/nsr/nwu078. Valley excitons in two-dimensional semiconductors

Valley excitons in two-dimensional semiconductors

10.1093/nsr/nwu078

Crossref journal-article

Oxford University Press (OUP)

National Science Review (286)

Abstract

Abstract Monolayer group-VIB transition-metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include the visible range direct band gap ideal for exploring optoelectronic applications; the intriguing physics associated with spin and valley pseudospin of carriers which implies potentials for novel electronics based on these internal degrees of freedom; the exceptionally strong Coulomb interaction due to the two-dimensional geometry and the large effective masses. The physics of excitons, the bound states of electrons and holes, has been one of the most actively studied topics on these two-dimensional semiconductors, where the excitons exhibit remarkably new features due to the strong Coulomb binding, the valley degeneracy of the band edges and the valley-dependent optical selection rules for interband transitions. Here, we give a brief overview of the experimental and theoretical findings on excitons in two-dimensional transition-metal dichalcogenides, with focus on the novel properties associated with their valley degrees of freedom.

Bibliography

Yu, H., Cui, X., Xu, X., & Yao, W. (2015). Valley excitons in two-dimensional semiconductors. National Science Review, 2(1), 57â70.

Authors 4

Hongyi Yu (first)
Xiaodong Cui (additional)
Xiaodong Xu (additional)
Wang Yao (additional)

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Dates

Type	When
Created	10 years, 7 months ago (Dec. 31, 2014, 12:05 a.m.)
Deposited	5 years, 7 months ago (Jan. 10, 2020, 1:57 p.m.)
Indexed	46 minutes ago (Aug. 25, 2025, 3:45 p.m.)
Issued	10 years, 6 months ago (Jan. 30, 2015)
Published	10 years, 6 months ago (Jan. 30, 2015)
Published Online	10 years, 6 months ago (Jan. 30, 2015)
Published Print	10 years, 5 months ago (March 1, 2015)

Funders 0

None

BibTeX

@article{Yu_2015, title={Valley excitons in two-dimensional semiconductors}, volume={2}, ISSN={2095-5138}, url={http://dx.doi.org/10.1093/nsr/nwu078}, DOI={10.1093/nsr/nwu078}, number={1}, journal={National Science Review}, publisher={Oxford University Press (OUP)}, author={Yu, Hongyi and Cui, Xiaodong and Xu, Xiaodong and Yao, Wang}, year={2015}, month=jan, pages={57–70} }

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