DOI: 10.1088/0957-4484/25/36/365202. High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors

High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors

10.1088/0957-4484/25/36/365202

Crossref journal-article

IOP Publishing

Nanotechnology (266)

Bibliography

Abderrahmane, A., Ko, P. J., Thu, T. V., Ishizawa, S., Takamura, T., & Sandhu, A. (2014). High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors. Nanotechnology, 25(36), 365202.

Authors 6

A Abderrahmane (first)
P J Ko (additional)
T V Thu (additional)
S Ishizawa (additional)
T Takamura (additional)
A Sandhu (additional)

References 18 Referenced 151

Dates

Type	When
Created	11 years ago (Aug. 20, 2014, 10:15 a.m.)
Deposited	5 years, 4 months ago (April 11, 2020, 7:29 a.m.)
Indexed	1 month, 1 week ago (July 9, 2025, 6:47 p.m.)
Issued	11 years ago (Aug. 20, 2014)
Published	11 years ago (Aug. 20, 2014)
Published Online	11 years ago (Aug. 20, 2014)
Published Print	10 years, 11 months ago (Sept. 12, 2014)

Funders 0

None

BibTeX

@article{Abderrahmane_2014, title={High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors}, volume={25}, ISSN={1361-6528}, url={http://dx.doi.org/10.1088/0957-4484/25/36/365202}, DOI={10.1088/0957-4484/25/36/365202}, number={36}, journal={Nanotechnology}, publisher={IOP Publishing}, author={Abderrahmane, A and Ko, P J and Thu, T V and Ishizawa, S and Takamura, T and Sandhu, A}, year={2014}, month=aug, pages={365202} }

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