DOI: 10.1088/0957-4484/18/38/385306. Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization

Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization

10.1088/0957-4484/18/38/385306

Crossref journal-article

IOP Publishing

Nanotechnology (266)

Bibliography

Tchernycheva, M., Sartel, C., Cirlin, G., Travers, L., Patriarche, G., Harmand, J.-C., Dang, L. S., Renard, J., Gayral, B., Nevou, L., & Julien, F. (2007). Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization. Nanotechnology, 18(38), 385306.

Authors 11

M Tchernycheva (first)
C Sartel (additional)
G Cirlin (additional)
L Travers (additional)
G Patriarche (additional)
J-C Harmand (additional)
Le Si Dang (additional)
J Renard (additional)
B Gayral (additional)
L Nevou (additional)
F Julien (additional)

References 36 Referenced 107

10.1002/1521-396X(200212)194:2<433::AID-PSSA433>3.0.CO;2-R
10.1143/JJAP.35.L74
10.1049/el:19960743
10.1103/PhysRevB.73.125347
10.1103/PhysRevB.62.16826 / Phys. Rev. by Calleja E (2000)
10.1021/ja993713u
10.1143/JJAP.36.L459
10.1103/PhysRevB.74.121302
10.1063/1.1753975
10.1021/nl034003w
10.1002/pssb.200404989
10.1063/1.2115087
10.1063/1.2089157
10.1016/S0022-0248(98)01346-3
10.1016/j.jcrysgro.2005.11.117
10.1016/j.jcrysgro.2005.11.079
10.1016/j.jcrysgro.2005.05.058
10.1007/s00339-005-3217-1
10.1063/1.2204836
10.1002/pssc.200461602 / Phys. Status Solidi by Sanford N A (2005)
10.1116/1.2186342
10.1143/JJAP.43.L1524
10.1103/PhysRevB.68.125305
10.1063/1.2206133
10.1063/1.2712772
10.1016/j.jcrysgro.2006.11.036
10.1063/1.1515114
{'key': '28', 'first-page': '147', 'volume': '18', 'author': 'Givargizov E I', 'year': '1973', 'journal-title': 'Kristallografiya', 'ISSN': 'http://id.crossref.org/issn/0023-4761', 'issn-type': 'print'} / Kristallografiya by Givargizov E I (1973)
10.1016/j.jcrysgro.2007.03.034
10.1103/PhysRevB.71.205325
10.1021/jp051702j
10.1063/1.2715119
10.1063/1.1583873
10.1016/j.jcrysgro.2005.11.073
10.1116/1.581975
10.1002/pssb.200675104

Dates

Type	When
Created	17 years, 11 months ago (Aug. 31, 2007, 11:13 p.m.)
Deposited	5 years, 4 months ago (April 10, 2020, 9:06 p.m.)
Indexed	9 months ago (Nov. 19, 2024, 11:08 a.m.)
Issued	17 years, 11 months ago (Aug. 31, 2007)
Published	17 years, 11 months ago (Aug. 31, 2007)
Published Online	17 years, 11 months ago (Aug. 31, 2007)
Published Print	17 years, 10 months ago (Sept. 26, 2007)

Funders 0

None

BibTeX

@article{Tchernycheva_2007, title={Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization}, volume={18}, ISSN={1361-6528}, url={http://dx.doi.org/10.1088/0957-4484/18/38/385306}, DOI={10.1088/0957-4484/18/38/385306}, number={38}, journal={Nanotechnology}, publisher={IOP Publishing}, author={Tchernycheva, M and Sartel, C and Cirlin, G and Travers, L and Patriarche, G and Harmand, J-C and Dang, Le Si and Renard, J and Gayral, B and Nevou, L and Julien, F}, year={2007}, month=aug, pages={385306} }

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