DOI: 10.1088/0953-8984/15/39/002. Defect reactions associated with divacancy elimination in silicon

Defect reactions associated with divacancy elimination in silicon

10.1088/0953-8984/15/39/002

Crossref journal-article

IOP Publishing

Journal of Physics: Condensed Matter (266)

Bibliography

Markevich, V. P., Peaker, A. R., Lastovskii, S. B., Murin, L. I., & LindstrÃ¶m, J. L. (2003). Defect reactions associated with divacancy elimination in silicon. Journal of Physics: Condensed Matter, 15(39), S2779âS2789.

Authors 5

V P Markevich (first)
A R Peaker (additional)
S B Lastovskii (additional)
L I Murin (additional)
J L Lindström (additional)

References 31 Referenced 52

10.1103/PhysRev.138.A543 / Phys. Rev. by Watkins G D (1965)
{'key': '2', 'first-page': '763', 'author': 'Svensson B G', 'year': '1999', 'journal-title': 'Properties of Crystalline Silicon'} / Properties of Crystalline Silicon by Svensson B G (1999)
{'key': '3', 'first-page': '221', 'author': 'Kimerling L C', 'year': '1977', 'journal-title': 'Radiation Effects in Semiconductors 1976'} / Radiation Effects in Semiconductors 1976 by Kimerling L C (1977)
10.1063/1.323260 / J. Appl. Phys. by Evwarye A O (1976)
10.1063/1.331460 / J. Appl. Phys. by Brotherton S D (1982)
10.1103/PhysRevB.43.2292 / Phys. Rev. by Svensson B G (1991)
10.1016/S0921-5107(99)00364-5 / Mater. Sci. Eng. by Peaker A R (2000)
10.1063/1.1564286
10.1103/PhysRevB.65.245201
10.1103/PhysRevB.65.233205
10.1103/PhysRev.152.761 / Phys. Rev. by Cheng L J (1966)
10.1103/PhysRevB.13.2653 / Phys. Rev. by Lee Y-H (1976)
10.1063/1.114276 / Appl. Phys. Lett. by Trauwaert M-A (1995)
10.1016/S0921-4526(99)00447-0 / Physica by Lindström J L (1999)
10.1103/PhysRevB.65.233207
10.1103/PhysRevB.64.195211 / Phys. Rev. by Pellegrino P (2001)
10.1016/0927-796X(95)00178-6 / Mater. Sci. Eng. by Estreicher S K (1995)
10.1103/PhysRevB.58.3842 / Phys. Rev. by Stallinga P (1998)
10.1016/S0921-4526(99)00437-8 / Physica by Bonde Nielsen K (1999)
10.1016/S0168-583X(00)00524-3 / Nucl. Instrum. Methods Phys. Res. by Lévêque P (2001)
10.1063/1.357126 / J. Appl. Phys. by Dobaczewski L (1994)
10.1016/S0921-4526(01)00694-9 / Physica by Lindström J L (2001)
10.1016/0921-5107(89)90259-6 / Mater. Sci. Eng. by Svensson B G (1989)
{'key': '24', 'first-page': '363', 'author': 'Tokuda Y', 'year': '1998', 'journal-title': 'Hydrogen in Semiconductors and Metals'} / Hydrogen in Semiconductors and Metals by Tokuda Y (1998)
10.1016/S0921-4526(99)00463-9 / Physica by Peaker A R (1999)
10.1016/S0921-4526(99)00461-5 / Physica by Feklisova O (1999)
10.1103/PhysRevB.42.5765 / Phys. Rev. by Song L W (1990)
10.1103/PhysRev.134.A1359 / Phys. Rev. by Watkins G D (1964)
10.1103/PhysRevB.62.158 / Phys. Rev. by Lavrov E V (2000)
10.1016/S0921-4526(01)00737-2
10.1103/PhysRev.171.856 / Phys. Rev. by Cheng L J (1968)

Dates

Type	When
Created	21 years, 7 months ago (Jan. 15, 2004, 11:14 p.m.)
Deposited	5 years, 4 months ago (April 10, 2020, 11:37 p.m.)
Indexed	1 year, 1 month ago (July 2, 2024, 12:33 a.m.)
Issued	21 years, 11 months ago (Sept. 19, 2003)
Published	21 years, 11 months ago (Sept. 19, 2003)
Published Online	21 years, 11 months ago (Sept. 19, 2003)
Published Print	21 years, 10 months ago (Oct. 8, 2003)

Funders 0

None

BibTeX

@article{Markevich_2003, title={Defect reactions associated with divacancy elimination in silicon}, volume={15}, ISSN={1361-648X}, url={http://dx.doi.org/10.1088/0953-8984/15/39/002}, DOI={10.1088/0953-8984/15/39/002}, number={39}, journal={Journal of Physics: Condensed Matter}, publisher={IOP Publishing}, author={Markevich, V P and Peaker, A R and Lastovskii, S B and Murin, L I and Lindström, J L}, year={2003}, month=sep, pages={S2779–S2789} }

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