DOI: 10.1088/0268-1242/24/10/105026. Memory window widening of Pt/SrBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by nitriding Si

Memory window widening of Pt/SrBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by nitriding Si

10.1088/0268-1242/24/10/105026

Crossref journal-article

IOP Publishing

Semiconductor Science and Technology (266)

Bibliography

Horiuchi, T., Takahashi, M., Ohhashi, K., & Sakai, S. (2009). Memory window widening of Pt/SrBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by nitriding Si. Semiconductor Science and Technology, 24(10), 105026.

Authors 4

Takeshi Horiuchi (first)
Mitsue Takahashi (additional)
Kentaro Ohhashi (additional)
Shigeki Sakai (additional)

References 17 Referenced 19

10.1016/S0169-4332(96)00963-4
10.1007/978-3-662-04307-3 / Ferroelectric Memories by Scott J F (2000)
10.1016/j.cap.2008.02.013
10.1109/LED.2004.828992
{'key': '5', 'first-page': '915', 'author': 'Sakai S Takahashi M Ilangovan R', 'year': '2004', 'journal-title': 'Int. Electron Devices Meeting Tech. Dig.'} / Int. Electron Devices Meeting Tech. Dig. by Sakai S Takahashi M Ilangovan R (2004)
10.1143/JJAP.43.7876
10.1143/JJAP.44.L800
10.1143/JJAP.44.6218
10.1063/1.2399351
10.1088/0268-1242/23/4/045011 / Semicond. Sci. Technol. by Li Q-H (2008)
10.1088/0268-1242/24/2/025012 / Semicond. Sci. Technol. by Li Q-H (2009)
10.2497/jjspm.55.17
10.1049/el:20083230
{'key': '14', 'first-page': '103', 'author': 'Sakai S Takahashi M Takeuchi K Li Q-H Horiuchi T Wang S Yun K-Y Takamiya M Sakurai T', 'year': '2008', 'journal-title': 'Joint Non-Volatile Semiconductor Memory Workshop and Int. Conf. on Memory Technology and Design, Proc.'} / Joint Non-Volatile Semiconductor Memory Workshop and Int. Conf. on Memory Technology and Design, Proc. by Sakai S Takahashi M Takeuchi K Li Q-H Horiuchi T Wang S Yun K-Y Takamiya M Sakurai T (2008)
10.1063/1.1385803
10.1116/1.2748808
10.1116/1.2952464

Dates

Type	When
Created	15 years, 10 months ago (Sept. 25, 2009, 11:14 p.m.)
Deposited	5 years, 4 months ago (April 10, 2020, 6:12 p.m.)
Indexed	2 months ago (June 19, 2025, 12:27 p.m.)
Issued	15 years, 10 months ago (Sept. 25, 2009)
Published	15 years, 10 months ago (Sept. 25, 2009)
Published Online	15 years, 10 months ago (Sept. 25, 2009)
Published Print	15 years, 10 months ago (Oct. 1, 2009)

Funders 0

None

BibTeX

@article{Horiuchi_2009, title={Memory window widening of Pt/SrBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by nitriding Si}, volume={24}, ISSN={1361-6641}, url={http://dx.doi.org/10.1088/0268-1242/24/10/105026}, DOI={10.1088/0268-1242/24/10/105026}, number={10}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Horiuchi, Takeshi and Takahashi, Mitsue and Ohhashi, Kentaro and Sakai, Shigeki}, year={2009}, month=sep, pages={105026} }

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