DOI: 10.1088/0268-1242/21/4/013. The mechanism of formation and properties of Li-doped p-type ZnO grown by a two-step heat treatment

The mechanism of formation and properties of Li-doped p-type ZnO grown by a two-step heat treatment

10.1088/0268-1242/21/4/013

Crossref journal-article

IOP Publishing

Semiconductor Science and Technology (266)

Bibliography

Wang, X. H., Yao, B., Zhang, Z. Z., Li, B. H., Wei, Z. P., Shen, D. Z., Lu, Y. M., & Fan, X. W. (2006). The mechanism of formation and properties of Li-doped p-type ZnO grown by a two-step heat treatment. Semiconductor Science and Technology, 21(4), 494â497.

Authors 8

X H Wang (first)
B Yao (additional)
Z Z Zhang (additional)
B H Li (additional)
Z P Wei (additional)
D Z Shen (additional)
Y M Lu (additional)
X W Fan (additional)

References 18 Referenced 23

10.1016/S0022-0248(00)00437-1
10.1016/S0042-207X(00)00313-4
10.1016/S0040-6090(01)01332-3
10.1103/PhysRevB.66.073202
10.1016/0022-0248(82)90351-7
10.1103/PhysRevB.25.6049
10.1143/JJAP.35.5160
10.1103/PhysRevB.71.155205
{'key': '9', 'author': 'Look D C', 'year': '1989', 'journal-title': 'Electrical Characterization of GaAs Material and Devices'} / Electrical Characterization of GaAs Material and Devices by Look D C (1989)
10.1063/1.1504875
10.1063/1.1659893
10.1016/S0921-4526(01)00877-8
10.1063/1.1756220
10.1063/1.1839649
10.1002/pssa.200420012
10.1063/1.1895480 / Appl. Phys. Lett. by Hwang D K (2005)
10.1063/1.1591064
10.1063/1.1590423

Dates

Type	When
Created	19 years, 6 months ago (March 2, 2006, 11:13 p.m.)
Deposited	5 years, 4 months ago (April 10, 2020, 6:05 p.m.)
Indexed	1 year, 2 months ago (June 20, 2024, 8:14 p.m.)
Issued	19 years, 6 months ago (March 2, 2006)
Published	19 years, 6 months ago (March 2, 2006)
Published Online	19 years, 6 months ago (March 2, 2006)
Published Print	19 years, 5 months ago (April 1, 2006)

Funders 0

None

BibTeX

@article{Wang_2006, title={The mechanism of formation and properties of Li-doped p-type ZnO grown by a two-step heat treatment}, volume={21}, ISSN={1361-6641}, url={http://dx.doi.org/10.1088/0268-1242/21/4/013}, DOI={10.1088/0268-1242/21/4/013}, number={4}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Wang, X H and Yao, B and Zhang, Z Z and Li, B H and Wei, Z P and Shen, D Z and Lu, Y M and Fan, X W}, year={2006}, month=mar, pages={494–497} }

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