DOI: 10.1088/0268-1242/19/6/l01. Nitrogen-implanted Ge2Sb2Te5film used as multilevel storage media for phase change random access memory

Nitrogen-implanted Ge2Sb2Te5film used as multilevel storage media for phase change random access memory

10.1088/0268-1242/19/6/l01

Crossref journal-article

IOP Publishing

Semiconductor Science and Technology (266)

Bibliography

Liu, B., Zhang, T., Xia, J., Song, Z., Feng, S., & Chen, B. (2004). Nitrogen-implanted Ge2Sb2Te5film used as multilevel storage media for phase change random access memory. Semiconductor Science and Technology, 19(6), L61âL64.

Authors 6

Bo Liu (first)
Ting Zhang (additional)
Jilin Xia (additional)
Zhitang Song (additional)
Songlin Feng (additional)
Bomy Chen (additional)

References 24 Referenced 74

10.1103/PhysRevLett.21.1450 / Phys. Rev. Lett. by Ovshinsky S R (1968)
10.1063/1.1653653
10.1143/JJAP.39.770 / Japan. J. Appl. Phys. by Ohta T (2000)
10.1143/JJAP.42.1044
10.1117/12.416829
10.1117/12.364449
{'key': '7', 'author': 'Lai S Lowrey T', 'year': '2001', 'journal-title': 'IEEE Conf. Proc. Int. Electron Devices Meeting 36.5.1'} / IEEE Conf. Proc. Int. Electron Devices Meeting 36.5.1 by Lai S Lowrey T (2001)
10.1109/23.903803
10.1109/T-ED.1973.17620 / IEEE Trans. Electron Devices by Bunton G V (1973)
10.1143/JJAP.28.1013 / Japan. J. Appl. Phys. by Gosain D P (1989)
10.1063/1.1598272
10.1088/0268-1242/10/1/011 / Semicond. Sci. Technol. by Bhatia K L (1995)
10.1088/0268-1242/17/3/302 / Semicond. Sci. Technol. by Bhatia K L (2002)
10.1007/s003390051025
10.1088/0268-1242/16/5/319 / Semicond. Sci. Technol. by Tsendin K D (2001)
10.1088/0268-1242/18/2/312 / Semicond. Sci. Technol. by Rajesh R (2003)
10.1143/JJAP.32.564 / Japan. J. Appl. Phys. by Nakayama K (1993)
10.1143/JJAP.39.6157 / Japan. J. Appl. Phys. by Nakayama K (2000)
10.1143/JJAP.42.404 / Japan. J. Appl. Phys. by Nakayama K (2003)
10.1007/s00339-002-2008-1
10.1109/VLSIT.2003.1221143 / Symposium on VLSI Technology Digest of Technical Papers by Horii H Yi J H Park J H (2003)
10.1063/1.348620
10.1143/JJAP.39.2775 / Japan. J. Appl. Phys. by Jeong T H (2000)
10.1063/1.371937

Dates

Type	When
Created	21 years, 3 months ago (April 21, 2004, 11:14 p.m.)
Deposited	5 years, 4 months ago (April 10, 2020, 5:59 p.m.)
Indexed	3 months, 1 week ago (May 8, 2025, 4:02 a.m.)
Issued	21 years, 3 months ago (April 22, 2004)
Published	21 years, 3 months ago (April 22, 2004)
Published Online	21 years, 3 months ago (April 22, 2004)
Published Print	21 years, 2 months ago (June 1, 2004)

Funders 0

None

BibTeX

@article{Liu_2004, title={Nitrogen-implanted Ge2Sb2Te5film used as multilevel storage media for phase change random access memory}, volume={19}, ISSN={1361-6641}, url={http://dx.doi.org/10.1088/0268-1242/19/6/l01}, DOI={10.1088/0268-1242/19/6/l01}, number={6}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Liu, Bo and Zhang, Ting and Xia, Jilin and Song, Zhitang and Feng, Songlin and Chen, Bomy}, year={2004}, month=apr, pages={L61–L64} }

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