DOI: 10.1088/0268-1242/13/6/009. X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers

X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers

10.1088/0268-1242/13/6/009

Crossref journal-article

IOP Publishing

Semiconductor Science and Technology (266)

Bibliography

HolÃ½, V., Darhuber, A. A., Stangl, J., Bauer, G., NÃ¼tzel, J., & Abstreiter, G. (1998). X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers. Semiconductor Science and Technology, 13(6), 590â598.

Authors 6

V Holý (first)
A A Darhuber (additional)
J Stangl (additional)
G Bauer (additional)
J Nützel (additional)
G Abstreiter (additional)

References 23 Referenced 17

10.1063/1.108221
10.1063/1.110547
10.1103/PhysRevB.53.13551
10.1557/S0883769400035302 / MRS Bull. by Roland C (1996)
10.1063/1.347281
10.1007/BF03041001 / Nuovo Cimento by Holý V (1997)
10.1103/PhysRevB.55.9960
10.1116/1.586961
10.1103/PhysRevB.48.9174
10.1103/PhysRevB.50.14435
10.1063/1.114158
10.1007/BF02659697 / J. Electron. Mater. by Baribeau J-M (1995)
{'key': '13', 'author': 'Reimer P M', 'year': '1996'} by Reimer P M (1996)
10.1103/PhysRevB.51.5297 / Phys. Rev. by de Boer D K G (1996)
10.1103/PhysRevB.53.6048
10.1103/PhysRevB.49.5817
10.1103/PhysRevB.47.16373
10.1103/PhysRevB.54.5860
10.1103/PhysRevB.49.10668 / Phys. Rev. by Holý V (1994)
10.1016/0039-6028(85)90727-7
10.1103/PhysRevLett.75.2730
10.1063/1.1657442 / J. Appl. Phys. by Schwoebel R L (1969)
10.1103/PhysRevB.38.2297

Dates

Type	When
Created	23 years ago (Aug. 25, 2002, 6:02 a.m.)
Deposited	5 years, 4 months ago (April 10, 2020, 5:44 p.m.)
Indexed	2 months, 2 weeks ago (June 24, 2025, 7:28 a.m.)
Issued	27 years, 3 months ago (June 1, 1998)
Published	27 years, 3 months ago (June 1, 1998)
Published Online	26 years, 8 months ago (Jan. 1, 1999)
Published Print	27 years, 3 months ago (June 1, 1998)

Funders 0

None

BibTeX

@article{Hol__1998, title={X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers}, volume={13}, ISSN={1361-6641}, url={http://dx.doi.org/10.1088/0268-1242/13/6/009}, DOI={10.1088/0268-1242/13/6/009}, number={6}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Holý, V and Darhuber, A A and Stangl, J and Bauer, G and Nützel, J and Abstreiter, G}, year={1998}, month=jun, pages={590–598} }

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