Abstract
The optical constants of epitaxial silicon have been obtained in the region 1–3.3 eV (to 3.1 eV forn) by means of optical transmission and photoconductivity measurements. The silicon layers are 0.1–3 μm thick and therefore give interference spectra in both measuring modes. The values ofnobtained here fit well with those obtained from reflectance and ellipsometric measurements on bulk silicon. The absorption coefficient α is calculated from the quotientITu/IT1, whereITu(1)is the upper (lower) envelope of the transmitted intensity interference curve. The values obtained here are greater by a factor of 2 than those of Dash & Newman (1955). Literature values obtained from ellipsometric measurements at λ = 5 461 Å show a substantial spread with the values of Dash & Newman as a lower limit.
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Dates
Type | When |
---|---|
Created | 18 years, 7 months ago (Jan. 22, 2007, 11:18 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 10, 2024, 5:49 a.m.) |
Indexed | 6 months, 2 weeks ago (Feb. 21, 2025, 6:36 a.m.) |
Issued | 49 years, 9 months ago (Dec. 1, 1975) |
Published | 49 years, 9 months ago (Dec. 1, 1975) |
Published Print | 49 years, 9 months ago (Dec. 1, 1975) |
@article{Rolf_Hulth_n_1975, title={Optical Constants of Epitaxial Silicon in the Region 1–3.3 eV}, volume={12}, ISSN={1402-4896}, url={http://dx.doi.org/10.1088/0031-8949/12/6/008}, DOI={10.1088/0031-8949/12/6/008}, number={6}, journal={Physica Scripta}, publisher={IOP Publishing}, author={Rolf Hulthén}, year={1975}, month=dec, pages={342–344} }