Abstract
For pt.I see ibid., vol.17, p.2115 (1984). Electrodeposited molybdenum selenide films have been characterised by optical, electrical and electrochemical studies. The optical absorption spectra show the material to be an indirect band gap semiconductor with band gap 1.14 eV. Electrical conductivity at different temperatures shows an impurity conduction and the presence of deep level traps. Mott-Schottky plots have been drawn to determine the type of semiconductor and its parameters, ND, Ecand Ev. The J-V characteristics of the MoSe2film in contact with 2I-/I2electrolyte indicate that the charge transfer at the interface is via the valence band and it also involves the surface states. Results from photoelectrochemical solar cells fabricated using various electrodeposited films are also discussed.
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 5:29 p.m.) |
Deposited | 1 year, 7 months ago (Jan. 4, 2024, 5:47 p.m.) |
Indexed | 6 months ago (Feb. 21, 2025, 4:15 a.m.) |
Issued | 40 years, 10 months ago (Oct. 14, 1984) |
Published | 40 years, 10 months ago (Oct. 14, 1984) |
Published Print | 40 years, 10 months ago (Oct. 14, 1984) |
@article{S_Chandra_1984, title={Electrodeposited semiconducting molybdenum selenide films. II. Optical, electrical, electrochemical and photoelectrochemical solar cell studies}, volume={17}, ISSN={1361-6463}, url={http://dx.doi.org/10.1088/0022-3727/17/10/023}, DOI={10.1088/0022-3727/17/10/023}, number={10}, journal={Journal of Physics D: Applied Physics}, publisher={IOP Publishing}, author={S Chandra and D P Singh and P C Srivastava and S N Sahu}, year={1984}, month=oct, pages={2125–2138} }