Crossref
journal-article
IOP Publishing
Journal of Physics C: Solid State Physics (266)
References
21
Referenced
31
10.1103/PhysRev.101.554
10.1103/PhysRev.107.450
{'key': '3', 'author': 'Fetter A L', 'year': '1971'}
by Fetter A L (1971){'key': '4', 'author': 'Fried B D', 'year': '1961'}
by Fried B D (1961)10.1109/EDL.1983.25795
/ IEEE Electron Devices by Hollis M A (1983)10.1103/PhysRevB.18.6890
{'key': '7', 'first-page': '25', 'volume': '10', 'author': 'Landau L D', 'year': '1946', 'journal-title': 'Zh. Eksp. Teor. Fiz.', 'ISSN': 'http://id.crossref.org/issn/0044-4510', 'issn-type': 'print'}
/ Zh. Eksp. Teor. Fiz. by Landau L D (1946){'key': '8', 'author': 'Lowe', 'year': '1982'}
by Lowe (1982)10.1088/0022-3719/18/12/013
/ J. Phys. C: Solid State Phys. by Lowe D (1985){'key': '10', 'author': 'Levi A F J', 'year': '1985'}
by Levi A F J (1985)10.1016/0378-4363(83)90497-7
10.1016/0378-4363(85)90639-4
{'key': '13', 'author': 'Mahan G D', 'year': '1981'}
by Mahan G D (1981){'key': '14', 'first-page': '188', 'volume': '131', 'author': 'Moglestue C', 'year': '1984', 'journal-title': 'Proc. IEE', 'ISSN': 'http://id.crossref.org/issn/0020-3270', 'issn-type': 'print'}
/ Proc. IEE by Moglestue C (1984)10.1103/PhysRev.92.626
{'key': '16', 'author': 'Pines D', 'year': '1963'}
by Pines D (1963)10.1063/1.90931
/ Appl. Phys. Lett. by Shannon J M (1979)10.1049/ij-ssed.1979.0030
/ Solid State Electron Devices by Shannon J M (1979){'key': '19', 'author': 'Shannon J M', 'year': '1983'}
by Shannon J M (1983)10.1143/JPSJ.47.861
/ J. Phys. Soc. Japan by Takenaka N (1979)10.1103/PhysRev.137.A1896
Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 4:39 p.m.) |
Deposited | 5 years, 4 months ago (April 11, 2020, 11:57 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 4, 2024, 11:42 a.m.) |
Issued | 39 years ago (July 30, 1986) |
Published | 39 years ago (July 30, 1986) |
Published Online | 24 years, 8 months ago (Nov. 23, 2000) |
Published Print | 39 years ago (July 30, 1986) |
@article{Rorison_1986, title={Electron-electron interaction in semiconductors with application to hot-electron transistors in silicon and gallium arsenide}, volume={19}, ISSN={0022-3719}, url={http://dx.doi.org/10.1088/0022-3719/19/21/006}, DOI={10.1088/0022-3719/19/21/006}, number={21}, journal={Journal of Physics C: Solid State Physics}, publisher={IOP Publishing}, author={Rorison, J M and Herbert, D C}, year={1986}, month=jul, pages={3991–4010} }