Crossref journal-article
IOP Publishing
Journal of Physics C: Solid State Physics (266)
Abstract

An analysis of the shape of photoconductivity spectral distribution curves of n-MoSe2in the range of the direct and indirect fundamental optical transitions is presented, taking surface and volume recombination of the photogenerated charge carriers into consideration. The c-axis hole mobility, muh,z, is almost as great as that in the layers, muh,xy, at room temperature in accordance with band calculations where the top valence band is three-dimensional, and gives allowance for a low effective hole mass anisotropy. A very large anisotropy of muh,xy/ muh,zof approximately 102-103at 77K can be qualitatively understood in terms of extrinsic hole scattering from ribbons of stacking faults. The surface recombination rate is enhanced by the presence of (1011) faces on the illuminated surface.

Bibliography

W Kautek. (1982). Electronic mobility anisotropy of layered semiconductors: transversal photoconductivity measurements at n-MoSe2. Journal of Physics C: Solid State Physics, 15(16), L519–L525.

Authors 1
  1. W Kautek (first)
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Dates
Type When
Created 23 years ago (July 26, 2002, 5:51 p.m.)
Deposited 1 year, 7 months ago (Jan. 4, 2024, 6 p.m.)
Indexed 6 months ago (Feb. 21, 2025, 4:24 a.m.)
Issued 43 years, 2 months ago (June 10, 1982)
Published 43 years, 2 months ago (June 10, 1982)
Published Print 43 years, 2 months ago (June 10, 1982)
Funders 0

None

@article{W_Kautek_1982, title={Electronic mobility anisotropy of layered semiconductors: transversal photoconductivity measurements at n-MoSe2}, volume={15}, ISSN={0022-3719}, url={http://dx.doi.org/10.1088/0022-3719/15/16/002}, DOI={10.1088/0022-3719/15/16/002}, number={16}, journal={Journal of Physics C: Solid State Physics}, publisher={IOP Publishing}, author={W Kautek}, year={1982}, month=jun, pages={L519–L525} }