Abstract
An analysis of the shape of photoconductivity spectral distribution curves of n-MoSe2in the range of the direct and indirect fundamental optical transitions is presented, taking surface and volume recombination of the photogenerated charge carriers into consideration. The c-axis hole mobility, muh,z, is almost as great as that in the layers, muh,xy, at room temperature in accordance with band calculations where the top valence band is three-dimensional, and gives allowance for a low effective hole mass anisotropy. A very large anisotropy of muh,xy/ muh,zof approximately 102-103at 77K can be qualitatively understood in terms of extrinsic hole scattering from ribbons of stacking faults. The surface recombination rate is enhanced by the presence of (1011) faces on the illuminated surface.
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 5:51 p.m.) |
Deposited | 1 year, 7 months ago (Jan. 4, 2024, 6 p.m.) |
Indexed | 6 months ago (Feb. 21, 2025, 4:24 a.m.) |
Issued | 43 years, 2 months ago (June 10, 1982) |
Published | 43 years, 2 months ago (June 10, 1982) |
Published Print | 43 years, 2 months ago (June 10, 1982) |
@article{W_Kautek_1982, title={Electronic mobility anisotropy of layered semiconductors: transversal photoconductivity measurements at n-MoSe2}, volume={15}, ISSN={0022-3719}, url={http://dx.doi.org/10.1088/0022-3719/15/16/002}, DOI={10.1088/0022-3719/15/16/002}, number={16}, journal={Journal of Physics C: Solid State Physics}, publisher={IOP Publishing}, author={W Kautek}, year={1982}, month=jun, pages={L519–L525} }