DOI: 10.1080/10584589608013063. Effects of oxidants on the deposition and dielectric properties of the SrTiO<sub>3</sub> thin films prepared by liquid source metal-organic chemical vapor deposition (MOCVD)

Effects of oxidants on the deposition and dielectric properties of the SrTiO3 thin films prepared by liquid source metal-organic chemical vapor deposition (MOCVD)

10.1080/10584589608013063

Crossref journal-article

Informa UK Limited

Integrated Ferroelectrics (301)

Bibliography

Hwang, C. S., Kang, C. S., Cho, H.-J., Park, S. O., Lee, B. T., Kim, J. W., Horii, H., Lee, S. I., & Lee, M. Y. (1996). Effects of oxidants on the deposition and dielectric properties of the SrTiO3 thin films prepared by liquid source metal-organic chemical vapor deposition (MOCVD). Integrated Ferroelectrics, 12(2â4), 199â213.

Authors 9

Cheol Seong Hwang (first)
Chang Seok Kang (additional)
Hag-Ju Cho (additional)
Soon Oh Park (additional)
Byoung Taek Lee (additional)
Jin Won Kim (additional)
Hideki Horii (additional)
Sang In Lee (additional)
Moon Yong Lee (additional)

References 8 Referenced 8

Yuuki , Y. Yamamuka , M. Makita , T. Horikawa , T. Shibano , T. Hirano , N. Maeda , N. Ono , K. Ogata , H. and Abe , H. Proc. Int. Electron Devices Meet. 1995. pp.115New York: IEEE.
{'key': 'CIT0002', 'first-page': '903', 'author': 'Nishioka Y.', 'journal-title': 'ibid'} / ibid by Nishioka Y.
{'key': 'CIT0003', 'first-page': '907', 'author': 'Lee K. P.', 'journal-title': 'ibid'} / ibid by Lee K. P.
10.1143/JJAP.34.5077
Yamamichi , S. Lesaicherre , P.Y. Yamaguchi , H. Takemura , K. Sone , S. Yabuta , H. Sata , K. Tamura , T. Nakajima , K. Ohnishi , S. Tokashiki , K. Hayashi , Y. Kata , Y. Miyasaka , Y. Yoshida , M. and Ono , H. 1995. Proc. Int. Electron Devices Meet., 119New York: IEEE. 1991
10.1143/JJAP.35.4890 / Jpn. J. Appl. Phys. by Kang C. S.
10.1143/JJAP.35.1548
10.1143/JJAP.34.5178

Dates

Type	When
Created	18 years, 2 months ago (June 25, 2007, 3:45 p.m.)
Deposited	7 years, 10 months ago (Oct. 31, 2017, 3:57 a.m.)
Indexed	1 year, 10 months ago (Oct. 11, 2023, 12:56 p.m.)
Issued	28 years, 11 months ago (Oct. 1, 1996)
Published	28 years, 11 months ago (Oct. 1, 1996)
Published Online	19 years ago (Aug. 19, 2006)
Published Print	28 years, 11 months ago (Oct. 1, 1996)

Funders 0

None

BibTeX

@article{Hwang_1996, title={Effects of oxidants on the deposition and dielectric properties of the SrTiO3 thin films prepared by liquid source metal-organic chemical vapor deposition (MOCVD)}, volume={12}, ISSN={1607-8489}, url={http://dx.doi.org/10.1080/10584589608013063}, DOI={10.1080/10584589608013063}, number={2–4}, journal={Integrated Ferroelectrics}, publisher={Informa UK Limited}, author={Hwang, Cheol Seong and Kang, Chang Seok and Cho, Hag-Ju and Park, Soon Oh and Lee, Byoung Taek and Kim, Jin Won and Horii, Hideki and Lee, Sang In and Lee, Moon Yong}, year={1996}, month=oct, pages={199–213} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2023,
        10,
        11
      ]
    ],
    "date-time": "2023-10-11T16:56:12Z",
    "timestamp": 1697043372235
  },
  "reference-count": 8,
  "publisher": "Informa UK Limited",
  "issue": "2-4",
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1996,
        10
      ]
    ]
  },
  "DOI": "10.1080/10584589608013063",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2007,
        6,
        25
      ]
    ],
    "date-time": "2007-06-25T19:45:49Z",
    "timestamp": 1182800749000
  },
  "page": "199-213",
  "source": "Crossref",
  "is-referenced-by-count": 8,
  "title": "Effects of oxidants on the deposition and dielectric properties of the SrTiO<sub>3</sub> thin films prepared by liquid source metal-organic chemical vapor deposition (MOCVD)",
  "prefix": "10.1080",
  "volume": "12",
  "author": [
    {
      "given": "Cheol Seong",
      "family": "Hwang",
      "sequence": "first",
      "affiliation": [
        {
          "name": "a  Samsung Electronics Co., Ltd.,  Semiconductor R&amp;D center  , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900,  Korea"
        }
      ]
    },
    {
      "given": "Chang Seok",
      "family": "Kang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "a  Samsung Electronics Co., Ltd.,  Semiconductor R&amp;D center  , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900,  Korea"
        }
      ]
    },
    {
      "given": "Hag-Ju",
      "family": "Cho",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "a  Samsung Electronics Co., Ltd.,  Semiconductor R&amp;D center  , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900,  Korea"
        }
      ]
    },
    {
      "given": "Soon Oh",
      "family": "Park",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "a  Samsung Electronics Co., Ltd.,  Semiconductor R&amp;D center  , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900,  Korea"
        }
      ]
    },
    {
      "given": "Byoung Taek",
      "family": "Lee",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "a  Samsung Electronics Co., Ltd.,  Semiconductor R&amp;D center  , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900,  Korea"
        }
      ]
    },
    {
      "given": "Jin Won",
      "family": "Kim",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "a  Samsung Electronics Co., Ltd.,  Semiconductor R&amp;D center  , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900,  Korea"
        }
      ]
    },
    {
      "given": "Hideki",
      "family": "Horii",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "a  Samsung Electronics Co., Ltd.,  Semiconductor R&amp;D center  , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900,  Korea"
        }
      ]
    },
    {
      "given": "Sang In",
      "family": "Lee",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "a  Samsung Electronics Co., Ltd.,  Semiconductor R&amp;D center  , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900,  Korea"
        }
      ]
    },
    {
      "given": "Moon Yong",
      "family": "Lee",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "a  Samsung Electronics Co., Ltd.,  Semiconductor R&amp;D center  , San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900,  Korea"
        }
      ]
    }
  ],
  "member": "301",
  "published-online": {
    "date-parts": [
      [
        2006,
        8,
        19
      ]
    ]
  },
  "reference": [
    {
      "key": "CIT0001",
      "unstructured": "Yuuki ,  Y. \nYamamuka ,  M. \nMakita ,  T. \nHorikawa ,  T. \nShibano ,  T. \nHirano ,  N. \nMaeda ,  N. \nOno ,  K. \nOgata ,  H.  and \nAbe ,  H.   Proc. Int. Electron Devices Meet. 1995.  pp.115New York: IEEE."
    },
    {
      "key": "CIT0002",
      "first-page": "903",
      "author": "Nishioka Y.",
      "journal-title": "ibid"
    },
    {
      "key": "CIT0003",
      "first-page": "907",
      "author": "Lee K. P.",
      "journal-title": "ibid"
    },
    {
      "key": "CIT0005",
      "doi-asserted-by": "publisher",
      "DOI": "10.1143/JJAP.34.5077"
    },
    {
      "key": "CIT0006",
      "unstructured": "Yamamichi ,  S. \nLesaicherre ,  P.Y. \nYamaguchi ,  H. \nTakemura ,  K. \nSone ,  S. \nYabuta ,  H. \nSata ,  K. \nTamura ,  T. \nNakajima ,  K. \nOhnishi ,  S. \nTokashiki ,  K. \nHayashi ,  Y. \nKata ,  Y. \nMiyasaka ,  Y. \nYoshida ,  M.  and \nOno ,  H.  1995. Proc. Int. Electron Devices Meet., 119New York: IEEE.  1991"
    },
    {
      "key": "CIT0007",
      "doi-asserted-by": "crossref",
      "first-page": "4890",
      "DOI": "10.1143/JJAP.35.4890",
      "volume": "35",
      "author": "Kang C. S.",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "CIT0008",
      "doi-asserted-by": "publisher",
      "DOI": "10.1143/JJAP.35.1548"
    },
    {
      "key": "CIT0009",
      "doi-asserted-by": "publisher",
      "DOI": "10.1143/JJAP.34.5178"
    }
  ],
  "container-title": "Integrated Ferroelectrics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://www.tandfonline.com/doi/pdf/10.1080/10584589608013063",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2017,
        10,
        31
      ]
    ],
    "date-time": "2017-10-31T07:57:35Z",
    "timestamp": 1509436655000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://www.tandfonline.com/doi/full/10.1080/10584589608013063"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1996,
        10
      ]
    ]
  },
  "references-count": 8,
  "journal-issue": {
    "issue": "2-4",
    "published-online": {
      "date-parts": [
        [
          2006,
          8,
          19
        ]
      ]
    },
    "published-print": {
      "date-parts": [
        [
          1996,
          10
        ]
      ]
    }
  },
  "alternative-id": [
    "10.1080/10584589608013063"
  ],
  "URL": "http://dx.doi.org/10.1080/10584589608013063",
  "relation": {},
  "ISSN": [
    "1058-4587",
    "1607-8489"
  ],
  "subject": [],
  "container-title-short": "Integrated Ferroelectrics",
  "published": {
    "date-parts": [
      [
        1996,
        10
      ]
    ]
  }
}