DOI: 10.1080/00337577008236293. Analysis of disorder distributions in boron implanted silicon

Analysis of disorder distributions in boron implanted silicon

10.1080/00337577008236293

Crossref journal-article

Informa UK Limited

Radiation Effects (301)

Bibliography

Westmoreland, J. E., Mayer, J. W., Eisen, F. H., & Welch, B. (1970). Analysis of disorder distributions in boron implanted silicon. Radiation Effects, 6(2), 161â174.

Authors 4

J. E. Westmoreland (first)
J. W. Mayer (additional)
F. H. Eisen (additional)
B. Welch (additional)

References 18 Referenced 92

10.1063/1.1652790 / Appl. Phys. Letters by Davies D. E. (1969)
10.1063/1.1653010 / Appl. Phys. Letters by Westmoreland J. E. (1969)
10.1063/1.1653113 / Appl. Phys. Letters by Stein H. J. (1970)
10.1063/1.1653114 / Appl. Phys. Letters by Brower K. L. (1970)
10.1063/1.1653112 / Appl. Phys. Letters by Brice D. K. (1970)
Eisen, F. H., Welch, B., Westmoreland, J. E. and Mayer, J. W. Proceedings of International Conference on Atomic Collision Phenomena in Solids. 1969, Brighton, England. University of Sussex, North-Holland Publishing Company.
{'key': 'CIT0007', 'first-page': '14', 'volume': '34', 'author': 'Lindhard J.', 'year': '1965', 'journal-title': 'Mat. Fys. Medd. Dan. Vid. Selsk.'} / Mat. Fys. Medd. Dan. Vid. Selsk. by Lindhard J. (1965)
{'key': 'CIT0008', 'author': 'Meyer O.', 'journal-title': 'Surf. Sci.'} / Surf. Sci. by Meyer O.
{'key': 'CIT0009', 'volume-title': 'Multiple Beam Interferometry of Surface Film', 'author': 'Tolansky S.', 'year': '1948'} / Multiple Beam Interferometry of Surface Film by Tolansky S. (1948)
Although a sharp definition of ‘off-lattice-site’ atoms is probably not possible as relates to backscattering centers, it is meaningful to speak of the Thomas-Fermi screening radiusaas the approximate minimum separation of a lattice atom from a lattice site required for this atom to backscatter the aligned analysis beam.ais defined as follows:a= 0.8853a0(Z12/3+Z22/3)−1/2where the Bohr radiusa0= 0.529 Å. For He in Si,a =0.172 Å;for H in Si,a= 0.180 Å
Eisen, F. H. (unpublished work)
10.1139/p68-081 / Can. J. Phys. by B⊘gh E. (1968)
{'key': 'CIT0013', 'first-page': '1031', 'volume': '15', 'author': 'Keil E.', 'year': '1960', 'journal-title': 'Z. fär Nuturforsch'} / Z. fär Nuturforsch by Keil E. (1960)
{'key': 'CIT0014', 'first-page': '78', 'volume': '3', 'author': 'Moliere G.', 'year': '1948', 'journal-title': 'Z. fär Nuturforsch'} / Z. fär Nuturforsch by Moliere G. (1948)
10.1103/PhysRevLett.15.59 / Phys. Rev. Letters by Sattler A. R. (1965)
10.1103/PhysRev.180.873 / Phys. Rev. by Picraux S. T. (1969)
Feldman, L. (private communication)
{'key': 'CIT0018', 'first-page': '204', 'volume': '34', 'author': 'Whaling W.', 'year': '1958', 'journal-title': 'Handbuch der Physik'} / Handbuch der Physik by Whaling W. (1958)

Dates

Type	When
Created	18 years, 1 month ago (July 8, 2007, 6:52 a.m.)
Deposited	8 years, 2 months ago (June 17, 2017, 12:26 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 3:12 a.m.)
Issued	55 years, 7 months ago (Jan. 1, 1970)
Published	55 years, 7 months ago (Jan. 1, 1970)
Published Online	18 years, 11 months ago (Sept. 13, 2006)
Published Print	55 years, 7 months ago (Jan. 1, 1970)

Funders 0

None

BibTeX

@article{Westmoreland_1970, title={Analysis of disorder distributions in boron implanted silicon}, volume={6}, ISSN={0033-7579}, url={http://dx.doi.org/10.1080/00337577008236293}, DOI={10.1080/00337577008236293}, number={2}, journal={Radiation Effects}, publisher={Informa UK Limited}, author={Westmoreland, J. E. and Mayer, J. W. and Eisen, F. H. and Welch, B.}, year={1970}, month=jan, pages={161–174} }

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