DOI: 10.1073/pnas.1317226110. Gate-tunable carbon nanotube–MoS <sub>2</sub> heterojunction p-n diode

Gate-tunable carbon nanotube–MoS 2 heterojunction p-n diode

10.1073/pnas.1317226110

Crossref journal-article

Proceedings of the National Academy of Sciences

Proceedings of the National Academy of Sciences (341)

Abstract

Significance The p-n junction diode is the most ubiquitous and fundamental building block of modern electronics, with far-reaching applications including integrated circuits, detectors, photovoltaics, and lasers. With the recent discovery and study of atomically thin materials, opportunities exist for adding new functionality to the p-n junction diode. Here we demonstrate that a p-n heterojunction diode based on atomically thin MoS 2 and sorted semiconducting carbon nanotubes yields unprecedented gate tunability in both its electrical and optical properties, which is not observed in the case of bulk semiconductor devices. In addition to enabling advanced electronic and optoelectronic technologies, this p-n heterojunction diode provides new insight into charge transport and separation at atomically thin heterointerfaces.

Bibliography

Jariwala, D., Sangwan, V. K., Wu, C.-C., Prabhumirashi, P. L., Geier, M. L., Marks, T. J., Lauhon, L. J., & Hersam, M. C. (2013). Gate-tunable carbon nanotubeâMoS 2 heterojunction p-n diode. Proceedings of the National Academy of Sciences, 110(45), 18076â18080.

Authors 8

Deep Jariwala (first)
Vinod K. Sangwan (additional)
Chung-Chiang Wu (additional)
Pradyumna L. Prabhumirashi (additional)
Michael L. Geier (additional)
Tobin J. Marks (additional)
Lincoln J. Lauhon (additional)
Mark C. Hersam (additional)

References 45 Referenced 406

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Dates

Type	When
Created	11 years, 9 months ago (Oct. 21, 2013, 10:57 p.m.)
Deposited	3 years, 4 months ago (April 16, 2022, 1:51 a.m.)
Indexed	54 minutes ago (Aug. 21, 2025, 11:29 a.m.)
Issued	11 years, 10 months ago (Oct. 21, 2013)
Published	11 years, 10 months ago (Oct. 21, 2013)
Published Online	11 years, 10 months ago (Oct. 21, 2013)
Published Print	11 years, 9 months ago (Nov. 5, 2013)

Funders 0

None

BibTeX

@article{Jariwala_2013, title={Gate-tunable carbon nanotube–MoS 2 heterojunction p-n diode}, volume={110}, ISSN={1091-6490}, url={http://dx.doi.org/10.1073/pnas.1317226110}, DOI={10.1073/pnas.1317226110}, number={45}, journal={Proceedings of the National Academy of Sciences}, publisher={Proceedings of the National Academy of Sciences}, author={Jariwala, Deep and Sangwan, Vinod K. and Wu, Chung-Chiang and Prabhumirashi, Pradyumna L. and Geier, Michael L. and Marks, Tobin J. and Lauhon, Lincoln J. and Hersam, Mark C.}, year={2013}, month=oct, pages={18076–18080} }

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