Abstract
We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the carrier density up to values exceeding 10 14 cm -2 . Whereas in monolayer the conductivity saturates, in bi- and trilayer filling of the higher-energy bands is observed to cause a nonmonotonic behavior of the conductivity and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.
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Dates
Type | When |
---|---|
Created | 14 years ago (July 26, 2011, 9:56 p.m.) |
Deposited | 3 years, 4 months ago (April 14, 2022, 11:44 a.m.) |
Indexed | 3 weeks ago (July 30, 2025, 10:25 a.m.) |
Issued | 14 years ago (July 26, 2011) |
Published | 14 years ago (July 26, 2011) |
Published Online | 14 years ago (July 26, 2011) |
Published Print | 14 years ago (Aug. 9, 2011) |
@article{Ye_2011, title={Accessing the transport properties of graphene and its multilayers at high carrier density}, volume={108}, ISSN={1091-6490}, url={http://dx.doi.org/10.1073/pnas.1018388108}, DOI={10.1073/pnas.1018388108}, number={32}, journal={Proceedings of the National Academy of Sciences}, publisher={Proceedings of the National Academy of Sciences}, author={Ye, Jianting and Craciun, Monica F. and Koshino, Mikito and Russo, Saverio and Inoue, Seiji and Yuan, Hongtao and Shimotani, Hidekazu and Morpurgo, Alberto F. and Iwasa, Yoshihiro}, year={2011}, month=jul, pages={13002–13006} }