DOI: 10.1073/pnas.0605033103. Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors

Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors

10.1073/pnas.0605033103

Crossref journal-article

Proceedings of the National Academy of Sciences

Proceedings of the National Academy of Sciences (341)

Abstract

We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2- b ]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (10 15 cm −2 ) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 × 10 6 A/cm 2 , and high metallic conductivities, 10 4 S/cm, in the FET channel; at 4.2 K, the current density is sustained at 10 7 A/cm 2 . Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is ≈3.5 cm 2 ·V −1 ·s −1 at 297 K, comparable with that found in fully crystalline organic devices.

Bibliography

Dhoot, A. S., Yuen, J. D., Heeney, M., McCulloch, I., Moses, D., & Heeger, A. J. (2006). Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors. Proceedings of the National Academy of Sciences, 103(32), 11834â11837.

Authors 6

Anoop S. Dhoot (first)
Jonathan D. Yuen (additional)
Martin Heeney (additional)
Iain McCulloch (additional)
Daniel Moses (additional)
Alan J. Heeger (additional)

References 12 Referenced 167

Dates

Type	When
Created	19 years ago (July 27, 2006, 8:34 p.m.)
Deposited	3 years, 4 months ago (April 12, 2022, 3:11 p.m.)
Indexed	10 months, 2 weeks ago (Oct. 5, 2024, 8:34 p.m.)
Issued	19 years ago (Aug. 8, 2006)
Published	19 years ago (Aug. 8, 2006)
Published Online	19 years ago (Aug. 8, 2006)
Published Print	19 years ago (Aug. 8, 2006)

Funders 0

None

BibTeX

@article{Dhoot_2006, title={Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors}, volume={103}, ISSN={1091-6490}, url={http://dx.doi.org/10.1073/pnas.0605033103}, DOI={10.1073/pnas.0605033103}, number={32}, journal={Proceedings of the National Academy of Sciences}, publisher={Proceedings of the National Academy of Sciences}, author={Dhoot, Anoop S. and Yuen, Jonathan D. and Heeney, Martin and McCulloch, Iain and Moses, Daniel and Heeger, Alan J.}, year={2006}, month=aug, pages={11834–11837} }

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  "abstract": "<jats:p>\n            We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-\n            <jats:italic>b</jats:italic>\n            ]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (10\n            <jats:sup>15</jats:sup>\n            cm\n            <jats:sup>\u22122</jats:sup>\n            ) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 \u00d7 10\n            <jats:sup>6</jats:sup>\n            A/cm\n            <jats:sup>2</jats:sup>\n            , and high metallic conductivities, 10\n            <jats:sup>4</jats:sup>\n            S/cm, in the FET channel; at 4.2 K, the current density is sustained at 10\n            <jats:sup>7</jats:sup>\n            A/cm\n            <jats:sup>2</jats:sup>\n            . Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is \u22483.5 cm\n            <jats:sup>2</jats:sup>\n            \u00b7V\n            <jats:sup>\u22121</jats:sup>\n            \u00b7s\n            <jats:sup>\u22121</jats:sup>\n            at 297 K, comparable with that found in fully crystalline organic devices.\n          </jats:p>",
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