DOI: 10.1063/1.99824. Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy

Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy

10.1063/1.99824

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The passivation of zinc acceptors in InP has been observed, originally in zinc-doped InGaAs/InP heterostructures. Evidence is presented to show that hydrogen, which has been detected by secondary ion mass spectrometry, is responsible for the phenomenon and that the source of atomic hydrogen is the arsine used in the epitaxial process. The hydrogen is bound within the epitaxial layers during the cooling down stage after growth is complete.

Bibliography

Antell, G. R., Briggs, A. T. R., Butler, B. R., Kitching, S. A., Stagg, J. P., Chew, A., & Sykes, D. E. (1988). Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy. Applied Physics Letters, 53(9), 758â760.

Authors 7

G. R. Antell (first)
A. T. R. Briggs (additional)
B. R. Butler (additional)
S. A. Kitching (additional)
J. P. Stagg (additional)
A. Chew (additional)
D. E. Sykes (additional)

References 9 Referenced 90

10.1103/PhysRevB.33.1102 / Phys. Rev. B (1986)
10.1063/1.331760 / J. Appl. Phys. (1983)
10.1103/PhysRevLett.51.2224 / Phys. Rev. Lett. (1983)
10.1007/BF00615975 / Appl. Phys. A (1987)
10.1063/1.96026 / Appl. Phys. Lett. (1985)
{'key': '2024020222430820200_r6'}
10.1088/0268-1242/2/5/010 / Semicond. Sci. Technol. (1987)
10.1016/0022-0248(84)90405-6 / J. Cryst. Growth (1984)
{'key': '2024020222430820200_r9'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:02 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 6:04 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 2:24 p.m.)
Issued	37 years ago (Aug. 29, 1988)
Published	37 years ago (Aug. 29, 1988)
Published Print	37 years ago (Aug. 29, 1988)

Funders 0

None

BibTeX

@article{Antell_1988, title={Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy}, volume={53}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.99824}, DOI={10.1063/1.99824}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Antell, G. R. and Briggs, A. T. R. and Butler, B. R. and Kitching, S. A. and Stagg, J. P. and Chew, A. and Sykes, D. E.}, year={1988}, month=aug, pages={758–760} }

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