Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Thin films of the high-temperature superconductor Y-Ba-Cu-O with zero-resistance transition temperatures up to 83 K have been recently reported by using a zirconia buffer layer on the primary materials of interest for electronics, Si and SiO2. In this letter, various characteristics of these films are discussed. Microstructural analysis using transmission electron microscopy shows the complex morphology of the unoriented polycrystalline films. Elemental depth profiling by x-ray photoelectron spectroscopy shows the effectiveness of the zirconia buffer layer in preventing interdiffusion; fluorine is found throughout the film at an abundance of 4 at. % The critical current density was measured as a function of temperature; its value is 5 kA cm−2 at 4.2 K.

Bibliography

Mogro-Campero, A., Turner, L. G., Hall, E. L., & Burrell, M. C. (1988). Characterization of thin films of Y-Ba-Cu-O on oxidized silicon with a zirconia buffer layer. Applied Physics Letters, 52(24), 2068–2070.

Authors 4
  1. A. Mogro-Campero (first)
  2. L. G. Turner (additional)
  3. E. L. Hall (additional)
  4. M. C. Burrell (additional)
References 13 Referenced 69
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 8:48 a.m.)
Deposited 1 year, 7 months ago (Feb. 2, 2024, 5:53 p.m.)
Indexed 1 year, 7 months ago (Feb. 4, 2024, 11:07 a.m.)
Issued 37 years, 2 months ago (June 13, 1988)
Published 37 years, 2 months ago (June 13, 1988)
Published Print 37 years, 2 months ago (June 13, 1988)
Funders 0

None

@article{Mogro_Campero_1988, title={Characterization of thin films of Y-Ba-Cu-O on oxidized silicon with a zirconia buffer layer}, volume={52}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.99749}, DOI={10.1063/1.99749}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mogro-Campero, A. and Turner, L. G. and Hall, E. L. and Burrell, M. C.}, year={1988}, month=jun, pages={2068–2070} }