DOI: 10.1063/1.99690. Relationship between hole trapping and interface state generation in metal-oxide-silicon structures

Relationship between hole trapping and interface state generation in metal-oxide-silicon structures

10.1063/1.99690

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have discovered a general relationship between the location of trapped holes and the subsequent generation of interface states. Experimentally, we find that a hole can become an interface state, but it must first be trapped between 20 and 70 Å from the Si/SiO2 interface (near-interfacial hole trap) and then transfer to within 18 Å of the interface (interfacial trapped holes). Finally, the hole captures an electron and becomes an interface state. The transfer process between near-interfacial and interfacial trapped holes does not seem to be a simple release-capture process. Rather it appears to involve a complicated migration of the trapped hole defect towards the interface. Radiation-hardened oxides are shown to have a similar number of near-interfacial traps, but these traps are shallower than those in the soft oxides.

Bibliography

Wang, S. J., Sung, J. M., & Lyon, S. A. (1988). Relationship between hole trapping and interface state generation in metal-oxide-silicon structures. Applied Physics Letters, 52(17), 1431â1433.

Authors 3

S. J. Wang (first)
J. M. Sung (additional)
S. A. Lyon (additional)

References 17 Referenced 86

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10.1109/PROC.1967.5776 / Proc. IEEE (1967)
{'key': '2024020222193053900_r3', 'first-page': '208', 'volume': '28', 'year': '1967', 'journal-title': 'RCA Rev.'} / RCA Rev. (1967)
{'key': '2024020222193053900_r4', 'first-page': '99', 'volume': 'NS-18', 'year': '1971', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1971)
10.1063/1.88592 / Appl. Phys. Lett. (1976)
{'key': '2024020222193053900_r6', 'first-page': '590', 'volume': '35', 'year': '1980', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1980)
10.1063/1.96736 / Appl. Phys. Lett. (1986)
10.1063/1.332169 / J. Appl. Phys. (1983)
10.1063/1.92514 / Appl. Phys. Lett. (1981)
{'key': '2024020222193053900_r10', 'first-page': '1651', 'volume': 'NS-27', 'year': '1980', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1980)
10.1063/1.96975 / Appl. Phys. Lett. (1986)
{'key': '2024020222193053900_r12'}
{'key': '2024020222193053900_r13', 'first-page': '1462', 'volume': 'NS-29', 'year': '1982', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1982)
10.1063/1.97946 / Appl. Phys. Lett. (1987)
10.1063/1.95534 / Appl. Phys. Lett. (1985)
10.1063/1.97391 / Appl. Phys. Lett. (1986)
10.1063/1.332171 / J. Appl. Phys. (1983)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:48 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 5:44 p.m.)
Indexed	4 months, 1 week ago (April 20, 2025, 12:42 a.m.)
Issued	37 years, 4 months ago (April 25, 1988)
Published	37 years, 4 months ago (April 25, 1988)
Published Print	37 years, 4 months ago (April 25, 1988)

Funders 0

None

BibTeX

@article{Wang_1988, title={Relationship between hole trapping and interface state generation in metal-oxide-silicon structures}, volume={52}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.99690}, DOI={10.1063/1.99690}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wang, S. J. and Sung, J. M. and Lyon, S. A.}, year={1988}, month=apr, pages={1431–1433} }

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