Abstract
We have developed structures with two well-defined negative differential resistance (NDR) regions by sequentially growing two resonant tunneling devices separated by an n+ connecting layer. Devices fabricated from these structures exhibited three stable operating points for multilevel logic circuits and were used in circuits which multiplied the input signal frequency by 3 or 5. This approach can be extended to obtain more than two NDR regions by vertical integration of additional resonant tunneling structures.
References
8
Referenced
45
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:48 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 2, 2024, 5:53 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 4, 2024, 10:28 a.m.) |
Issued | 37 years, 2 months ago (June 20, 1988) |
Published | 37 years, 2 months ago (June 20, 1988) |
Published Print | 37 years, 2 months ago (June 20, 1988) |
@article{Potter_1988, title={Three-dimensional integration of resonant tunneling structures for signal processing and three-state logic}, volume={52}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.99565}, DOI={10.1063/1.99565}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Potter, Robert C. and Lakhani, Amir A. and Beyea, Dana and Hier, Harry and Hempfling, Erica and Fathimulla, Ayub}, year={1988}, month=jun, pages={2163–2164} }