DOI: 10.1063/1.99413. Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1−<i>x</i>Sb<i>x</i>

Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1−xSbx

10.1063/1.99413

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The III/V semiconductor alloy GaP1−xSbx has been grown for the first time. This alloy, which has a large miscibility gap at the growth temperatures of 530–600 °C, has been grown by organometallic vapor phase epitaxy at atmospheric pressure. In spite of the miscibility gap, which is calculated to extend from x=0.01 to 0.99 at 530 °C, layers with excellent surface morphologies could be grown throughout the entire composition range. The 10 K energy band gap has been determined as a function of composition by using photoluminescence, x-ray diffraction, and electron microprobe analysis, yielding bowing parameters of 3.8 and 2.7 eV for the Γ and X conduction band minima, respectively.

Bibliography

Jou, M. J., Cherng, Y. T., Jen, H. R., & Stringfellow, G. B. (1988). Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1âxSbx. Applied Physics Letters, 52(7), 549â551.

Authors 4

M. J. Jou (first)
Y. T. Cherng (additional)
H. R. Jen (additional)
G. B. Stringfellow (additional)

References 20 Referenced 61

10.1016/0022-0248(82)90226-3 / J. Cryst. Growth (1982)
10.1016/S0022-0248(74)80047-3 / J. Cryst. Growth (1974)
10.1016/0022-0248(83)90002-7 / J. Cryst. Growth (1983)
10.1063/1.331719 / J. Appl. Phys. (1983)
{'key': '2024020222060098100_r5', 'first-page': '1875', 'volume': '16', 'year': '1979', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1979)
10.1016/0022-0248(83)90156-2 / J. Cryst. Growth (1983)
10.1007/BF02657927 / J. Electron. Mater. (1984)
10.1007/BF02649907 / J. Electron. Mater. (1986)
10.1063/1.96830 / Appl. Phys. Lett. (1986)
{'key': '2024020222060098100_r10'}
10.1016/0022-0248(87)90219-3 / J. Cryst. Growth (1987)
10.1007/BF02656016 / J. Electron. Mater. (1978)
10.1007/BF02655439 / J. Electron. Mater. (1978)
{'key': '2024020222060098100_r14'}
10.1007/BF02661008 / J. Electron. Mater. (1981)
10.1016/0022-0248(83)90329-9 / J. Cryst. Growth (1983)
10.1016/0022-0248(86)90034-5 / J. Cryst. Growth (1986)
10.1063/1.334817 / J. Appl. Phys. (1985)
10.1063/1.1656922 / J. Appl. Phys. (1968)
{'key': '2024020222060098100_r19a', 'first-page': '111', 'volume': '1', 'year': '1956', 'journal-title': 'Bull. Am. Phys. Soc.'} / Bull. Am. Phys. Soc. (1956)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:05 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 5:27 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 6:05 a.m.)
Issued	37 years, 6 months ago (Feb. 15, 1988)
Published	37 years, 6 months ago (Feb. 15, 1988)
Published Print	37 years, 6 months ago (Feb. 15, 1988)

Funders 0

None

BibTeX

@article{Jou_1988, title={Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1−xSbx}, volume={52}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.99413}, DOI={10.1063/1.99413}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Jou, M. J. and Cherng, Y. T. and Jen, H. R. and Stringfellow, G. B.}, year={1988}, month=feb, pages={549–551} }

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