DOI: 10.1063/1.99219. Growth of low-density two-dimensional electron system with very high mobility by molecular beam epitaxy

Growth of low-density two-dimensional electron system with very high mobility by molecular beam epitaxy

10.1063/1.99219

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report on the growth of modulation-doped GaAs/Alx Ga1−xAs heterostructures with mobilities (μ) on the order of 1×106 cm2 /V s (at 4.2 K) and areal densities (ns ) below 8×1010 cm−2 . In growing these structures we employ the atomic plane doping technique and ultrathick (&gt;1000 Å) spacer layers. The mobilities of these structures are the highest ever reported for low densities. Measurements of μ vs ns as a function of illumination or gate voltage indicate μ∼nαs behavior with α≂0.6 and, even for ns ≂1.4×1010 cm−2 , μ has a value in excess of 0.3×106 cm2 /V s.

Bibliography

Shayegan, M., Goldman, V. J., Jiang, C., Sajoto, T., & Santos, M. (1988). Growth of low-density two-dimensional electron system with very high mobility by molecular beam epitaxy. Applied Physics Letters, 52(13), 1086â1088.

Authors 5

M. Shayegan (first)
V. J. Goldman (additional)
C. Jiang (additional)
T. Sajoto (additional)
M. Santos (additional)

References 14 Referenced 64

10.1016/0038-1098(87)90412-1 / Solid State Commun. (1987)
10.1063/1.97597 / Appl. Phys. Lett. (1986)
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10.1063/1.97710 / Appl. Phys. Lett. (1987)
{'key': '2024020222145650400_r5'}
{'key': '2024020222145650400_r6', 'first-page': '1711', 'volume': 'QE-22', 'year': '1986', 'journal-title': 'IEEE J. Quantum Electron.'} / IEEE J. Quantum Electron. (1986)
10.1103/PhysRevLett.59.1776 / Phys. Rev. Lett. (1987)
10.1016/0022-0248(87)90409-X / J. Cryst. Growth (1987)
{'key': '2024020222145650400_r9', 'first-page': '806', 'volume': '4', 'year': '1986', 'journal-title': 'J. Vac. Sci. Technol. A'} / J. Vac. Sci. Technol. A (1986)
{'key': '2024020222145650400_r9a'}
{'key': '2024020222145650400_r10'}
{'key': '2024020222145650400_r10a', 'first-page': '715', 'volume': '32', 'year': '1987', 'journal-title': 'Bull. Am. Phys. Soc.'} / Bull. Am. Phys. Soc. (1987)
10.1103/PhysRevB.33.8291 / Phys. Rev. B (1986)
10.1016/0039-6028(84)90415-1 / Surf. Sci. (1984)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:48 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 5:40 p.m.)
Indexed	1 year, 1 month ago (July 26, 2024, 6:31 p.m.)
Issued	37 years, 5 months ago (March 28, 1988)
Published	37 years, 5 months ago (March 28, 1988)
Published Print	37 years, 5 months ago (March 28, 1988)

Funders 0

None

BibTeX

@article{Shayegan_1988, title={Growth of low-density two-dimensional electron system with very high mobility by molecular beam epitaxy}, volume={52}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.99219}, DOI={10.1063/1.99219}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Shayegan, M. and Goldman, V. J. and Jiang, C. and Sajoto, T. and Santos, M.}, year={1988}, month=mar, pages={1086–1088} }

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