DOI: 10.1063/1.98990. Transient electrical conductivity of nonequilibrium carriers excited by subpicosecond optical pulses in GaAs

Transient electrical conductivity of nonequilibrium carriers excited by subpicosecond optical pulses in GaAs

10.1063/1.98990

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We calculate the time-dependent electrical conductivity σ(t) for the nonequilibrium carriers excited by a subpicosecond laser pulse in a polar semiconductor like GaAs. The photoexcited carriers are assumed to relax towards equilibrium by emitting longitudinal optical (LO) phonons in a cascade via the strong Fröhlich interaction. We show that σ(t), obtained in the picosecond time domain, has a highly nonlinear time evolution. It develops a pronounced dip, with its value becoming negative, whenever the generated low density carrier distribution is sharply peaked initially at energy ε≂mℏωLO, m=integer, ℏωLO being the long wavelength LO phonon energy.

Bibliography

Vengurlekar, A. S., & Jha, S. S. (1987). Transient electrical conductivity of nonequilibrium carriers excited by subpicosecond optical pulses in GaAs. Applied Physics Letters, 51(5), 323â325.

Authors 2

A. S. Vengurlekar (first)
Sudhanshu S. Jha (additional)

References 13 Referenced 7

10.1103/PhysRevLett.44.1505 / Phys. Rev. Lett. (1980)
10.1103/PhysRevLett.54.2151 / Phys. Rev. Lett. (1985)
{'key': '2024020221303739000_r1b', 'first-page': 'C7', 'volume': '42', 'year': '1981', 'journal-title': 'J. Phys. (Paris) Colloq.'} / J. Phys. (Paris) Colloq. (1981)
10.1016/0038-1098(84)90531-3 / Solid State Commun. (1984)
{'key': '2024020221303739000_r1d', 'first-page': '1728', 'volume': 'QE-22', 'year': '1986', 'journal-title': 'IEEE J. Quantum Electron.'} / IEEE J. Quantum Electron. (1986)
10.1103/PhysRevB.34.6003 / Phys. Rev. B (1986)
10.1103/PhysRevB.34.5498 / Phys. Rev. B (1986)
{'key': '2024020221303739000_r2b', 'first-page': '155', 'volume': '134', 'year': '1985', 'journal-title': 'Physica B'} / Physica B (1985)
10.1109/T-ED.1966.15630 / IEEE Trans. Electron Devices (1966)
10.1103/PhysRev.150.613 / Phys. Rev. (1966)
10.1103/PhysRev.150.619 / Phys. Rev. (1966)
10.1103/PhysRevB.30.4501 / Phys. Rev. B (1984)
{'key': '2024020221303739000_r6', 'first-page': '570', 'volume': '12', 'year': '1957', 'journal-title': 'J. Phys. Soc. (Japan)'} / J. Phys. Soc. (Japan) (1957)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:48 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 4:55 p.m.)
Indexed	1 year, 6 months ago (Feb. 4, 2024, 4:57 a.m.)
Issued	38 years, 1 month ago (Aug. 3, 1987)
Published	38 years, 1 month ago (Aug. 3, 1987)
Published Print	38 years, 1 month ago (Aug. 3, 1987)

Funders 0

None

BibTeX

@article{Vengurlekar_1987, title={Transient electrical conductivity of nonequilibrium carriers excited by subpicosecond optical pulses in GaAs}, volume={51}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.98990}, DOI={10.1063/1.98990}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Vengurlekar, A. S. and Jha, Sudhanshu S.}, year={1987}, month=aug, pages={323–325} }

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