DOI: 10.1063/1.98949. Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions

Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions

10.1063/1.98949

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Current-voltage behavior is studied experimentally in a Hg0.78Cd0.22Te-CdTe-Hg0.78Cd0.22Te heterostructure grown by molecular beam epitaxy. At temperatures above 160 K, energy-band diagrams suggest that the dominant low-bias current is thermionic hole emission across the CdTe barrier layer. This interpretation yields a direct determination of 390±75 meV for the HgTe-CdTe valence-band discontinuity at 300 K. Similar analyses of current-voltage data taken at 190–300 K suggest that the valence-band offset decreases at low temperatures in this heterojunction.

Bibliography

Chow, D. H., McCaldin, J. O., Bonnefoi, A. R., McGill, T. C., Sou, I. K., & Faurie, J. P. (1987). Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions. Applied Physics Letters, 51(26), 2230â2232.

Authors 6

D. H. Chow (first)
J. O. McCaldin (additional)
A. R. Bonnefoi (additional)
T. C. McGill (additional)
I. K. Sou (additional)
J. P. Faurie (additional)

References 26 Referenced 17

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10.1016/0022-0248(85)90127-7 / J. Cryst. Growth (1985)
10.1116/1.574037 / J. Vac. Sci. Technol. A (1986)
10.1063/1.97981 / Appl. Phys. Lett. (1987)
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10.1063/1.96805 / Appl. Phys. Lett. (1986)
10.1063/1.97390 / Appl. Phys. Lett. (1986)
10.1063/1.96897 / Appl. Phys. Lett. (1986)
{'key': '2024020221584725300_r11'}
10.1103/PhysRevLett.36.56 / Phys. Rev. Lett. (1976)
{'key': '2024020221584725300_r13'}
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10.1103/PhysRevLett.58.2594 / Phys. Rev. Lett. (1987)
10.1063/1.97907 / Appl. Phys. Lett. (1987)
10.1103/PhysRevLett.51.907 / Phys. Rev. Lett. (1983)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:48 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 5:14 p.m.)
Indexed	1 year, 7 months ago (Feb. 2, 2024, 6:59 p.m.)
Issued	37 years, 8 months ago (Dec. 28, 1987)
Published	37 years, 8 months ago (Dec. 28, 1987)
Published Print	37 years, 8 months ago (Dec. 28, 1987)

Funders 0

None

BibTeX

@article{Chow_1987, title={Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions}, volume={51}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.98949}, DOI={10.1063/1.98949}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chow, D. H. and McCaldin, J. O. and Bonnefoi, A. R. and McGill, T. C. and Sou, I. K. and Faurie, J. P.}, year={1987}, month=dec, pages={2230–2232} }

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