DOI: 10.1063/1.98824. Improved β-SiC heteroepitaxial films using off-axis Si substrates

Improved β-SiC heteroepitaxial films using off-axis Si substrates

10.1063/1.98824

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

All β-SiC films grown using on-axis (001) Si substrates that have been examined with transmission electron microscopy exhibit a high density of interfacial twins, stacking faults, and antiphase disorder. The antiphase boundaries can be decorated by chemical etching, sputter etching, wet oxidation, and β-SiC growth in the presence of diborane. All traces of antiphase disorder are eliminated when the heteroepitaxial growth is carried out on vicinal (001) Si substrates that are tilted 2° about a 〈110〉 axis. In addition, growth on the off-axis Si produces β-SiC films that are significantly smoother than on-axis films. The density of stacking faults is apparently unaffected by growth on the off-axis substrates.

Bibliography

Powell, J. A., Matus, L. G., Kuczmarski, M. A., Chorey, C. M., Cheng, T. T., & Pirouz, P. (1987). Improved Î²-SiC heteroepitaxial films using off-axis Si substrates. Applied Physics Letters, 51(11), 823â825.

Authors 6

J. A. Powell (first)
L. G. Matus (additional)
M. A. Kuczmarski (additional)
C. M. Chorey (additional)
T. T. Cheng (additional)
P. Pirouz (additional)

References 18 Referenced 63

10.1063/1.93970 / Appl. Phys. Lett. (1983)
10.1063/1.94973 / Appl. Phys. Lett. (1984)
10.1149/1.2113921 / J. Electrochem. Soc. (1985)
{'key': '2024020221392177100_r4'}
10.1016/0022-0248(86)90158-2 / J. Cryst. Growth (1986)
10.1063/1.97661 / Appl. Phys. Lett. (1987)
10.1063/1.97667 / Appl. Phys. Lett. (1987)
{'key': '2024020221392177100_r8', 'first-page': '404', 'volume': 'EDL-7', 'year': '1986', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1986)
{'key': '2024020221392177100_r9', 'first-page': '692', 'volume': 'EDL-7', 'year': '1986', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1986)
{'key': '2024020221392177100_r10'}
{'key': '2024020221392177100_r11', 'first-page': '48', 'volume': 'EDL-8', 'year': '1987', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1987)
10.1107/S0021889882011352 / J. Appl. Crystallogr. (1982)
{'key': '2024020221392177100_r13'}
10.1143/JJAP.25.L285 / Jpn. J. Appl. Phys. (1986)
{'key': '2024020221392177100_r15'}
10.1149/1.2100708 / J. Electrochem. Soc. (1987)
{'key': '2024020221392177100_r17', 'first-page': '668', 'volume': '1', 'year': '1983', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1983)
10.1016/0039-6028(80)90052-7 / Surf. Sci. (1980)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:48 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 5 p.m.)
Indexed	1 year, 6 months ago (Feb. 11, 2024, 2:57 a.m.)
Issued	37 years, 11 months ago (Sept. 14, 1987)
Published	37 years, 11 months ago (Sept. 14, 1987)
Published Print	37 years, 11 months ago (Sept. 14, 1987)

Funders 0

None

BibTeX

@article{Powell_1987, title={Improved β-SiC heteroepitaxial films using off-axis Si substrates}, volume={51}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.98824}, DOI={10.1063/1.98824}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Powell, J. A. and Matus, L. G. and Kuczmarski, M. A. and Chorey, C. M. and Cheng, T. T. and Pirouz, P.}, year={1987}, month=sep, pages={823–825} }

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