DOI: 10.1063/1.98813. Nature of the <i>E</i>′ deep hole trap in metal-oxide-semiconductor oxides

Nature of the E′ deep hole trap in metal-oxide-semiconductor oxides

10.1063/1.98813

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have found through a sequence of ultraviolet illuminations, electron spin resonance measurements, and capacitance versus voltage measurements, that the E′ deep hole trap in metal-oxide-semiconductor silicon dioxide is a fundamentally reversible defect. Our results are totally consistent with an oxygen vacancy model for the E′ deep hole trap, but our results are inconsistent with the bond strain gradient model for the deep hole trap in metal-oxide-semiconductor silicon dioxide.

Bibliography

Witham, H. S., & Lenahan, P. M. (1987). Nature of the Eâ² deep hole trap in metal-oxide-semiconductor oxides. Applied Physics Letters, 51(13), 1007â1009.

Authors 2

H. S. Witham (first)
P. M. Lenahan (additional)

References 25 Referenced 91

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:48 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 5:02 p.m.)
Indexed	5 months ago (March 29, 2025, 12:12 p.m.)
Issued	37 years, 11 months ago (Sept. 28, 1987)
Published	37 years, 11 months ago (Sept. 28, 1987)
Published Print	37 years, 11 months ago (Sept. 28, 1987)

Funders 0

None

BibTeX

@article{Witham_1987, title={Nature of the E′ deep hole trap in metal-oxide-semiconductor oxides}, volume={51}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.98813}, DOI={10.1063/1.98813}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Witham, H. S. and Lenahan, P. M.}, year={1987}, month=sep, pages={1007–1009} }

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