Abstract
We have achieved avalanche gain at a wavelength of 10.3 μm in AlxGa1−xAs/GaAs quantum well superlattices. The photoelectrons are generated by resonant intersubband absorption and tunneling, and then avalanche via hot-electron impact ionization of carriers out of the quantum wells. Good agreement is obtained between a theoretical calculation of this process and our experiments.
References
13
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:48 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 2, 2024, 5 p.m.) |
Indexed | 1 year, 1 month ago (July 6, 2024, 2:01 a.m.) |
Issued | 37 years, 11 months ago (Sept. 21, 1987) |
Published | 37 years, 11 months ago (Sept. 21, 1987) |
Published Print | 37 years, 11 months ago (Sept. 21, 1987) |
@article{Levine_1987, title={Quantum well avalanche multiplication initiated by 10 μm intersubband absorption and photoexcited tunneling}, volume={51}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.98806}, DOI={10.1063/1.98806}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Levine, B. F. and Choi, K. K. and Bethea, C. G. and Walker, J. and Malik, R. J.}, year={1987}, month=sep, pages={934–936} }