DOI: 10.1063/1.98667. Relaxation of strained-layer semiconductor structures via plastic flow

Relaxation of strained-layer semiconductor structures via plastic flow

10.1063/1.98667

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

An outstanding puzzle concerning strained-layer semiconductors is that metastable structures can be grown in which exact coherence with the lattice is apparently conserved in layers much thicker than the equilibrium critical thickness. Using standard descriptions of dislocation dynamics and relaxation via plastic flow, a model for the relaxation of an initially coherent metastable strained layer is developed. This model is applied to relief of mismatch strain in the SiGe/Si(100) system, and good agreement with experimental data is found. Furthermore, the combined effect of relaxation kinetics and finite instrumental resolution on the observed critical thickness was calculated. The results successfully reproduce experimental data on metastable critical thickness in the SiGe/Si(100) system.

Bibliography

Dodson, B. W., & Tsao, J. Y. (1987). Relaxation of strained-layer semiconductor structures via plastic flow. Applied Physics Letters, 51(17), 1325â1327.

Authors 2

Brian W. Dodson (first)
Jeffrey Y. Tsao (additional)

References 11 Referenced 517

{'key': '2024020221453654100_r1', 'first-page': '1677', 'volume': 'QE-22', 'year': '1986', 'journal-title': 'IEEE J. Quantum Electron.'} / IEEE J. Quantum Electron. (1986)
{'key': '2024020221453654100_r2'}
10.1063/1.97066 / Appl. Phys. Lett. (1986)
10.1116/1.572361 / J. Vac. Sci. Technol. A (1984)
10.1063/1.98004 / Appl. Phys. Lett. (1987)
10.1063/1.98984 / Appl. Phys. Lett. (1987)
10.1063/1.98746 / Appl. Phys. Lett. (1987)
{'key': '2024020221453654100_r8'}
10.1063/1.1659510 / J. Appl. Phys. (1970)
10.1039/df9643800201 / Disc. Faraday Soc. (1964)
10.1007/BF00896611 / Appl. Phys. (1975)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:03 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 5:04 p.m.)
Indexed	2 months ago (June 24, 2025, 7:28 a.m.)
Issued	37 years, 10 months ago (Oct. 26, 1987)
Published	37 years, 10 months ago (Oct. 26, 1987)
Published Print	37 years, 10 months ago (Oct. 26, 1987)

Funders 0

None

BibTeX

@article{Dodson_1987, title={Relaxation of strained-layer semiconductor structures via plastic flow}, volume={51}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.98667}, DOI={10.1063/1.98667}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Dodson, Brian W. and Tsao, Jeffrey Y.}, year={1987}, month=oct, pages={1325–1327} }

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