DOI: 10.1063/1.98588. AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio

AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio

10.1063/1.98588

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report the largest peak-to-valley current (PVC) ratios to date from AlGaAs/GaAs double barrier (either alloy barrier or superlattice barrier) diodes. PVC ratios as high as 3.6 and 21.7 were obtained from an AlAs/GaAs superlattice barrier structure at 300 and 77 K, respectively. In an alloy barrier structure with x=0.42 (x=0.3), PVC ratios of 3.9 (2.2) and 14.3 (7.0) were observed at 300 and 77 K, respectively. We attribute these excellent results to a ‘‘two-step’’ spacer layer incorporated in the devices studied which facilitated the growth of high material quality.

Bibliography

Huang, C. I., Paulus, M. J., Bozada, C. A., Dudley, S. C., Evans, K. R., Stutz, C. E., Jones, R. L., & Cheney, M. E. (1987). AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio. Applied Physics Letters, 51(2), 121â123.

Authors 8

C. I. Huang (first)
M. J. Paulus (additional)
C. A. Bozada (additional)
S. C. Dudley (additional)
K. R. Evans (additional)
C. E. Stutz (additional)
R. L. Jones (additional)
M. E. Cheney (additional)

References 18 Referenced 117

10.1063/1.1654509 / Appl. Phys. Lett. (1973)
10.1063/1.1655067 / Appl. Phys. Lett. (1974)
10.1063/1.95574 / Appl. Phys. Lett. (1985)
{'key': '2024020221280070800_r3', 'first-page': '158', 'volume': '48', 'year': '1986', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1986)
{'key': '2024020221280070800_r3a'}
10.1063/1.96849 / Appl. Phys. Lett. (1986)
10.1063/1.97629 / Appl. Phys. Lett. (1986)
10.1063/1.94434 / Appl. Phys. Lett. (1983)
10.1063/1.97826 / Appl. Phys. Lett. (1987)
10.1063/1.96276 / Appl. Phys. Lett. (1985)
{'key': '2024020221280070800_r9'}
{'key': '2024020221280070800_r10'}
{'issue': '2', 'key': '2024020221280070800_r11', 'first-page': 'L786', 'volume': '25', 'year': '1986', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1986)
10.1063/1.97356 / Appl. Phys. Lett. (1986)
{'issue': '2', 'key': '2024020221280070800_r13', 'first-page': 'L577', 'volume': '25', 'year': '1986', 'journal-title': 'Jpn. J. Appl.'} / Jpn. J. Appl. (1986)
10.1063/1.338213 / J. Appl. Phys. (1987)
10.1063/1.97428 / Appl. Phys. Lett. (1986)
10.1063/1.98097 / Appl. Phys. Lett. (1987)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:03 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 4:54 p.m.)
Indexed	2 weeks, 5 days ago (Aug. 7, 2025, 4:50 p.m.)
Issued	38 years, 1 month ago (July 13, 1987)
Published	38 years, 1 month ago (July 13, 1987)
Published Print	38 years, 1 month ago (July 13, 1987)

Funders 0

None

BibTeX

@article{Huang_1987, title={AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio}, volume={51}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.98588}, DOI={10.1063/1.98588}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Huang, C. I. and Paulus, M. J. and Bozada, C. A. and Dudley, S. C. and Evans, K. R. and Stutz, C. E. and Jones, R. L. and Cheney, M. E.}, year={1987}, month=jul, pages={121–123} }

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