DOI: 10.1063/1.98570. Effectiveness of strained-layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates

Effectiveness of strained-layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates

10.1063/1.98570

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

In GaAs-GaAsP strained-layer superlattices grown lattice matched to GaAs are effective buffer layers in reducing dislocations in epitaxial GaAs films grown on Si substrates. The strained-layer superlattice structure permits high values of strain to be employed without the strained-layer superlattice generating dislocations of its own. We find that the strained-layer superlattice buffer is extremely effective in blocking threading dislocations of low density and is less effective when the dislocation is high. It appears that for a given strained-layer superlattice there is a finite capacity for blocking dislocations. Transmission electron microscopy has been used to investigate the role of the superlattice buffer layer.

Bibliography

El-Masry, N., Tarn, J. C. L., Humphreys, T. P., Hamaguchi, N., Karam, N. H., & Bedair, S. M. (1987). Effectiveness of strained-layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates. Applied Physics Letters, 51(20), 1608â1610.

Authors 6

N. El-Masry (first)
J. C. L. Tarn (additional)
T. P. Humphreys (additional)
N. Hamaguchi (additional)
N. H. Karam (additional)
S. M. Bedair (additional)

References 8 Referenced 53

10.1063/1.97631 / Appl. Phys. Lett. (1986)
{'key': '2024020221490977600_r2'}
10.1063/1.98117 / Appl. Phys. Lett. (1987)
10.1063/1.97556 / Appl. Phys. Lett. (1986)
10.1063/1.337253 / J. Appl. Phys. (1986)
10.1063/1.335363 / J. Appl. Phys. (1985)
10.1016/0040-6090(76)90085-7 / Thin Solid Films (1976)
10.1063/1.95663 / Appl. Phys. Lett. (1985)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:48 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 5:06 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 8:58 p.m.)
Issued	37 years, 9 months ago (Nov. 16, 1987)
Published	37 years, 9 months ago (Nov. 16, 1987)
Published Print	37 years, 9 months ago (Nov. 16, 1987)

Funders 0

None

BibTeX

@article{El_Masry_1987, title={Effectiveness of strained-layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates}, volume={51}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.98570}, DOI={10.1063/1.98570}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={El-Masry, N. and Tarn, J. C. L. and Humphreys, T. P. and Hamaguchi, N. and Karam, N. H. and Bedair, S. M.}, year={1987}, month=nov, pages={1608–1610} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        11
      ]
    ],
    "date-time": "2024-02-11T01:58:42Z",
    "timestamp": 1707616722990
  },
  "reference-count": 8,
  "publisher": "AIP Publishing",
  "issue": "20",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1987,
        11,
        16
      ]
    ]
  },
  "abstract": "<jats:p>In\u2009GaAs-GaAsP strained-layer superlattices grown lattice matched to GaAs are effective buffer layers in reducing dislocations in epitaxial GaAs films grown on Si substrates. The strained-layer superlattice structure permits high values of strain to be employed without the strained-layer superlattice generating dislocations of its own. We find that the strained-layer superlattice buffer is extremely effective in blocking threading dislocations of low density and is less effective when the dislocation is high. It appears that for a given strained-layer superlattice there is a finite capacity for blocking dislocations. Transmission electron microscopy has been used to investigate the role of the superlattice buffer layer.</jats:p>",
  "DOI": "10.1063/1.98570",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:48:42Z",
    "timestamp": 1027687722000
  },
  "page": "1608-1610",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 53,
  "title": "Effectiveness of strained-layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates",
  "prefix": "10.1063",
  "volume": "51",
  "author": [
    {
      "given": "N.",
      "family": "El-Masry",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Material Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695"
        }
      ]
    },
    {
      "given": "J. C. L.",
      "family": "Tarn",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Material Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695"
        }
      ]
    },
    {
      "given": "T. P.",
      "family": "Humphreys",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Electrical and Computer Engineering Department, North Carolina State University, Raleigh, North Carolina 27695-7911"
        }
      ]
    },
    {
      "given": "N.",
      "family": "Hamaguchi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Electrical and Computer Engineering Department, North Carolina State University, Raleigh, North Carolina 27695-7911"
        }
      ]
    },
    {
      "given": "N. H.",
      "family": "Karam",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Electrical and Computer Engineering Department, North Carolina State University, Raleigh, North Carolina 27695-7911"
        }
      ]
    },
    {
      "given": "S. M.",
      "family": "Bedair",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Electrical and Computer Engineering Department, North Carolina State University, Raleigh, North Carolina 27695-7911"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020221490977600_r1",
      "doi-asserted-by": "crossref",
      "first-page": "942",
      "DOI": "10.1063/1.97631",
      "volume": "49",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020221490977600_r2"
    },
    {
      "key": "2024020221490977600_r3",
      "doi-asserted-by": "crossref",
      "first-page": "31",
      "DOI": "10.1063/1.98117",
      "volume": "50",
      "year": "1987",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020221490977600_r4",
      "doi-asserted-by": "crossref",
      "first-page": "815",
      "DOI": "10.1063/1.97556",
      "volume": "49",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020221490977600_r5",
      "doi-asserted-by": "crossref",
      "first-page": "1640",
      "DOI": "10.1063/1.337253",
      "volume": "60",
      "year": "1986",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020221490977600_r6",
      "doi-asserted-by": "crossref",
      "first-page": "4578",
      "DOI": "10.1063/1.335363",
      "volume": "57",
      "year": "1985",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020221490977600_r7",
      "doi-asserted-by": "crossref",
      "first-page": "253",
      "DOI": "10.1016/0040-6090(76)90085-7",
      "volume": "33",
      "year": "1976",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2024020221490977600_r8",
      "doi-asserted-by": "crossref",
      "first-page": "294",
      "DOI": "10.1063/1.95663",
      "volume": "46",
      "year": "1985",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/51/20/1608/18463418/1608_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/51/20/1608/18463418/1608_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        2
      ]
    ],
    "date-time": "2024-02-02T22:06:47Z",
    "timestamp": 1706911607000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/51/20/1608/52922/Effectiveness-of-strained-layer-superlattices-in"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1987,
        11,
        16
      ]
    ]
  },
  "references-count": 8,
  "journal-issue": {
    "issue": "20",
    "published-print": {
      "date-parts": [
        [
          1987,
          11,
          16
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.98570",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1987,
        11,
        16
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1987,
        11,
        16
      ]
    ]
  }
}